2N5400 2N5401 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5400 2N5401 UNITS Collector-Base Voltage V 130 160 V CBO Collector-Emitter Voltage V 120 150 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.5 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5400 2N5401 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=100V - 100 - - nA CBO CB I V =100V, T=100C - 100 - - A CBO CB A I V=120V - - - 50 nA CBO CB I V =120V, T=100C - - - 50 A CBO CB A I V=3.0V - 50 - 50 nA EBO EB BV I=100A 130 - 160 - V CBO C BV I=1.0mA 120 - 150 - V CEO C BV I=10A 5.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.2 - 0.2 V CE(SAT) C B V I =50mA, I=5.0mA - 0.5 - 0.5 V CE(SAT) C B V I =10mA, I=1.0mA - 1.0 - 1.0 V BE(SAT) C B V I =50mA, I=5.0mA - 1.0 - 1.0 V BE(SAT) C B h V =5.0V, I=1.0mA 30 - 50 - FE CE C h V =5.0V, I=10mA 40 240 60 240 FE CE C h V =5.0V, I=50mA 40 - 50 - FE CE C f V =10V, I=10mA, f=100MHz 100 400 100 300 MHz T CE C C V =10V, I=0, f=1.0MHz - 6.0 - 6.0 pF ob CB E h V =10V, I=1.0mA, f=1.0kHz 30 200 40 200 fe CE C NF V =5.0V, I =250A, R=1.0k, CE C S f=10Hz to 15.7kHz - 8.0 - 8.0 dB R1 (5-December 2014)2N5400 2N5401 SILICON PNP TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (5-December 2014) www.centralsemi.com