TQP4M0013 High Isolation Absorptive SPST Switch Applications WLAN Cellular Infrastructure Test and Measurement Smart Energy UHF/VHF LMR General Purpose Broadband Wireless 8-pin 2x2 mm DFN Package Product Features Functional Block Diagram General Purpose Pin 1 Reference Mark Low Insertion Loss +49 dBm Input IP3 RF2 NC 1 8 High Isolation Absorptive GND 2 7 V CTRL Single Positive Voltage Control Controller Small 2x2 mm SMT Package GND 3 6 V DD NC 4 5 RF1 Backside Paddle - RF/DC GND General Description Pin Configuration The TQP4M0013 is a GaAs FET single-pole, single Pin No. Label throw (SPST) high isolation absorptive switch. The 1, 4 NC TQP4M0013 may be operated using a DC supply range 2, 3 GND from 3 to 5 Volts and with control signals operating from 3 to 5 Volts. The TQP4M0013 has 100-4000 MHz 5 RF1 broadband performance. 6 V DD 7 VCTRL The TQP4M0013 is packaged in a RoHS-compliant, 8 RF2 compact 2x2 mm surface-mount leadless package. This SPDT switch is targeted for use in wireless infrastructure, test and measurement, or can be used for any general purpose RF application. Ordering Information Part No. Description TQP4M0013 SPST Absorptive Switch TQP4M0013-PCB 0.1-4.0 GHz Evaluation Board Standard T/R size = 2500 pieces on a 7 reel Datasheet: Rev C 09-06-13 Disclaimer: Subject to change without notice - 1 of 6 - 2013 TriQuint www.triquint.com TQP4M0013 High Isolation Absorptive SPST Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units V 3.0 5.0 V Storage Temperature -65 to 165C DD Operating Temp. Range -40 +85 C RF Input Power, CW, 50, T = 25C +33 dBm Supply Voltage (VDD) +6 V Electrical specifications are measured at specified test Control Voltage (V ) V +0.5 V CTRL DD conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VDD = +5 V, VCTRL = 0 V (low) or 3.3 V (high), Temp.=+25C, 50 system Parameter Conditions Min Typ Max Units Operational Frequency Range 100 4000 MHz Low 0 0.2 V Control Voltage (V ) CTRL High 1.8 VDD V 1 GHz 0.55 Insertion Loss 2 GHz 0.71 0.87 dB 3 GHz 0.77 1 GHz 50 Isolation 2 GHz 38 43 dB 3 GHz 37 1 GHz 15 RF1/RF2 Return Loss 2 GHz 15 dB Insertion Loss State 3 GHz 17 1 GHz 16 RF2 Return Loss 2 GHz 15 dB Isolation Loss State 3 GHz 17 Input P1dB f=1 GHz +35 dBm f=1 GHz Input IP3 +49 dBm Pin=+15 dBm/tone, f= 1 MHz tON,tOFF (50% CTL to 10/90% RF) 150 ns Switching Speed tON,tOFF (50% CTL to 2/98% RF) 150 ns Total Supply current (IDD) 82 uA Control Voltages Switch Control Truth Table State Bias Condition V Signal Path State (RF1 to RF2) CTRL Low 0.2 V Low Off (isolation) High 1.8 V High On (Insertion Loss) Datasheet: Rev C 09-06-13 Disclaimer: Subject to change without notice - 2 of 6 - 2013 TriQuint www.triquint.com