X-On Electronics has gained recognition as a prominent supplier of RGC80TSX8RGC11 igbt transistors across the USA, India, Europe, Australia, and various other global locations. RGC80TSX8RGC11 igbt transistors are a product manufactured by ROHM. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

RGC80TSX8RGC11 ROHM

RGC80TSX8RGC11 electronic component of ROHM
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See Product Specifications
Part No.RGC80TSX8RGC11
Manufacturer: ROHM
Category:IGBT Transistors
Description: IGBT Transistors REVERSE CONDUCTING IGBT
Datasheet: RGC80TSX8RGC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.6463 ea
Line Total: USD 9.65

Availability - 1107
Ships to you between
Fri. 14 Jun to Tue. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1064 - WHS 1


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 9.3495
10 : USD 7.958
25 : USD 7.061
100 : USD 6.785
250 : USD 6.371
450 : USD 5.8535
900 : USD 5.7385
5400 : USD 5.612

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the RGC80TSX8RGC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGC80TSX8RGC11 and other electronic components in the IGBT Transistors category and beyond.

RGC80TSX8R 1800V 40A Field Stop Trench IGBT Datasheet lOutline TO-247N V 1800V CES I 40A C (100C) V 2.2V CE(sat) (Typ.) P 535W D (1) (2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector *1 (3) Emitter 3) Low Switching Loss & Soft Switching (1) 4) Monolithic Body Diode *1 Monolithic Body Diode (3) with Low Forward Voltage 5) Pb - free Lead Plating RoHS Compliant lPackaging Specifications Packaging Tube lApplication Voltage - resonance Inverter Reel Size (mm) - IH Tape Width (mm) - Type Basic Ordering Unit (pcs) 450 Packing Code C11 Marking RGC80TSX8R lAbsolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 1800 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 80 A C C Collector Current T = 100C I 40 A C C *1 Pulsed Collector Current I 120 A CP T = 25C I 80 A C F Diode Forward Current T = 100C I 40 A C F *1 Diode Pulsed Forward Current I 80 A FP T = 25C P 535 W C D Power Dissipation T = 100C P 267 W C D Operating Junction Temperature T -40 to +175 C j T Storage Temperature -55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2019.04 - Rev.B 2019 ROHM Co., Ltd. All rights reserved. 1/10Datasheet RGC80TSX8R lThermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.28 C/W (j-c) Thermal Resistance Diode Junction - Case R - - 0.28 C/W (j-c) lIGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 1800 - - V CES C GE Voltage Collector Cut - off Current I V = 1860V, V = 0V - - 10 A CES CE GE Gate - Emitter Leakage I V = 30V, V = 0V - - 200 nA GES GE CE Current Gate - Emitter Threshold V V = 5V, I = 120.7mA 5.0 6.0 7.0 V GE(th) CE C Voltage I = 40A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 2.2 5.0 V CE(sat) j Voltage T = 175C - 2.9 - j www.rohm.com 2019.04 - Rev.B 2019 ROHM Co., Ltd. All rights reserved. 2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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