RRE02VS6SGTR ROHM

Data Sheet Rectifier Diode RRE02VS6S lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification 0.170.1 1.1 0.05 1.30.05 lFeatures 1)Small mold type. (TUMD2S) 2)Low V F TUMD2S 3)High voltage lStructure lConstruction Silicon epitaxial planer 0.80.05 0.60.2 ROHM : TUMD2S 0.1 dot (year week factory) + day lTaping dimensions (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 1.430.05 4.00.1 1.00.2 0 0.90.08 lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V D0.5 600 V RM Reverse voltage V Direct voltage 600 V R Glass epoxy substrate mounted Average rectified forward current Io 0.2 A R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive I Forward current surge peak 1 A FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Tj=25 C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =0.2A Forward voltage 0.95 1.1 V F F V =600V Reverse current I 0.01 1 A R R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B 1/4 1.90.1 2.50.2 3.50.05 1.750.1 0.8 2.75 8.00.2 2.80.05 2.3 Data Sheet RRE02VS6S 1 10000 Tj=150 C 1000 Tj=150 C 0.1 Tj=125 C 100 Tj=125 C Tj=75 C 0.01 Tj=25 C 10 Tj=75 C Tj=25 C 0.001 1 0 200 400 600 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGE V (V) R V -I CHARACTERISTICS F F V -I CHARACTERISTICS R R 1000 10 f=1MHz Tj=25 C I =200mA F 980 n=20pcs 960 AVE:967mV 1 940 920 0.1 900 0 10 20 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 1000 5.0 Tj=25 C 4.5 f=1MHz Tj=25 C 4.0 V =0V V =600V R R n=10pcs n=20pcs 3.5 100 3.0 2.5 AVE:3.1pF 2.0 10 1.5 AVE:27.4nA 1.0 0.5 1 0.0 I DISPERSION MAP Ct DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.07 - Rev.B 2/4 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)