KMT32B Magnetic Angle Sensor TDFN SPECIFICATIONS AMR Sensor with 180 period high accuracy high resolution for the use at moderate field strengths tiny TDFN package ROHS & REACH compliant SO8 The KMT32B is a magnetic field sensor based on the anisotropic magneto resistance effect, i.e. it is sensing the magnetic field direction independently on the magnetic field strength for applied field strengths H>25 kA/m. The sensor contains two parallel supplied Wheatstone bridges, which enclose a sensitive angle of 45 degrees. A rotating magnetic field in the surface parallel to the chip (x-y FEATURES plane) will therefore deliver two independent sinusoidal output Contactless angular position, signals, one following a cos(2 ) and the second following a ideal for harsh environments sin(2 ) function, being the angle between sensor and field Design optimized for linearity direction (see Figure 2). High accuracy The KMT32B magnetic field sensor is suited for high precision Low cost, low power angle measurement applications at a regular field strength of H0 Self diagnosis feature 25 kA/m (generated for example with magnet 67.044 from Attractive SMD packages Magnetfabrik Bonn at a distance of 5.2 mm at room temperature). User has complete control over With reduced accuracy, the sensor KMT32B may be used with a signal evaluation field strength of H0 14 kA/m (at room temperature be aware of Extended operating temperature the influence of the earth magnetic field ). Most magnets show a range decreasing field strength with temperature while the magnetic (-40 C to +150 C, +160C on field direction is unchanged. request) REACH & RoHS compliant (lead free) SENSOR SOLUTIONS /// KMT32B Rev 6 06/2017 Page 1 KMT32B Magnetic Angle Sensor APPLICATIONS Absolute and incremental angle measurement Automotive (steering angle, torque) Robotics Camera positioning Potentiometer replacement Position measurement in medical applications Motor motion control CHARACTERISTIC VALUES Parameter Symbol Condition Min Typ Max Unit A. Operating Limits Max. supply voltage Vcc 10 V ,max Max. current (single bridge) Icc 4 mA ,max Operating temperature Top -40 +150 C Storage temperature -40 +150 Tst C B. Sensor Specifications (T=25 C) Supply voltage Vcc 5 V Resistance (single bridge) Rb 2400 3000 3600 Output signal amplitude V Condition A, B 9 11 13 mV/V PEAK Offset voltage V Condition A, B -1 0 +1 mV/V OFF Angular inaccuracy Condition A, B 0.05 0.2 deg Angular hysteresis Condition A, B 0.1 deg H C. Sensor Specifications TC of amplitude Condition A, C TCSV -0.35 %/K TC of resistance Condition A, C TCBR +0.35 %/K TC of offset Condition A, C TCVoff -4 0 +4 V/V/K Stress above one or more of the limiting values may cause permanent damage to the device. Exposure to limiting values for extended periods may affect device reliability. MEASUREMENT CONDITIONS Parameter Symbol Unit Condition Condition A: Set Up Conditions Ambient temperature T = 25 C (unless otherwise noted) T C Supply voltage Vcc = 5 V Vcc V Applied magnetic field H = 25 kA/m H kA/m SENSOR SOLUTIONS /// KMT32B Rev 6 06/2017 Page 2