X-On Electronics has gained recognition as a prominent supplier of BA682-GS08 pin diodes across the USA, India, Europe, Australia, and various other global locations. BA682-GS08 pin diodes are a product manufactured by Vishay. We provide cost-effective solutions for pin diodes, ensuring timely deliveries around the world.

BA682-GS08 Vishay

BA682-GS08 electronic component of Vishay
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See Product Specifications
Part No.BA682-GS08
Manufacturer: Vishay
Category:PIN Diodes
Description: Diode PIN Switch 35V Automotive 2-Pin Mini-MELF SOD-80 T/R
Datasheet: BA682-GS08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.0368 ea
Line Total: USD 92

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.0368

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vr - Reverse Voltage
Maximum Diode Capacitance
Maximum Series Resistance @ Maximum IF
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Frequency Range
Type
Brand
Maximum Series Resistance Minimum If
Factory Pack Quantity :
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We are delighted to provide the BA682-GS08 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BA682-GS08 and other electronic components in the PIN Diodes category and beyond.

BA682 / BA683 Vishay Semiconductors Band Switching Diodes Features Silicon Planar Diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC 949371 and WEEE 2002/96/EC Applications Band switching in VHF-tuners Mechanical Data Case: MiniMELF Glass case SOD80 Weight: approx. 31 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13 reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7 reel (8 mm tape), 12.5 k/box Parts Table Part Type differentiation Ordering code Remarks BA682 V = 35 V, r at I 3 mA = max 0.7 BA682-GS18 or BA682-GS08 Tape and Reel R f F BA683 V = 35 V, r at I 3 mA = max 1.2 BA683-GS18 or BA683-GS08 Tape and Reel R f F Absolute Maximum Ratings T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Reverse voltage V 35 V R Forward continuous current I 100 mA F Thermal Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Symbol Value Unit Junction to ambient air on PC board R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 150 C j Storage temperature range T - 55 to +150 C stg Document Number 85530 www.vishay.com Rev. 1.5, 16-Mar-06 1BA682 / BA683 Vishay Semiconductors Electrical Characteristics T = 25 C, unless otherwise specified amb Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage I = 100 mA V 1000 mV F F Reverse current V = 20 V I 50 nA R R Diode capacitance f = 100 MHz, V = 1 V C 1.5 pF R D f = 100 MHz, V = 3 V BA682 C 1.25 pF R D BA683 C 1.2 pF D Differential forward resistance f = 200 MHz, I = 3 mA BA682 r 0.7 F f BA683 r 1.2 f f = 200 MHz, I = 10 mA BA682 r 0.5 F f BA683 r 0.9 f Typical Characteristics T = 25 C, unless otherwise specified amb 100 f = 200 MHz T = 25 C j 10 BA 683 1 BA 682 0.1 0.1 1 10 100 94 9074 I - Forward Current (mA) F Figure 1. Differential Forward Resistance vs. Forward Current 3.0 f = 200 MHz 2.5 T = 25 C j 2.0 1.5 BA 682 1.0 BA 683 0.5 0 0.1 1 10 100 94 9075 V -ReverseVoltage (V) R Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com Document Number 85530 2 Rev. 1.5, 16-Mar-06 r - Differential Forward Resistance () C - Diode Capacitance (pF) f D

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay / Huntington
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