X-On Electronics has gained recognition as a prominent supplier of SI1012CR-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI1012CR-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI1012CR-T1-GE3 Vishay

SI1012CR-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI1012CR-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: null 630mA 396mO@600mA,4.5V 240mW null SC-75A MOSFETs ROHS
An industrial-grade bidirectional optocoupler for isolation and transfer applications.
Datasheet: SI1012CR-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1296 ea
Line Total: USD 0.65

Availability - 994
Ships to you between
Mon. 17 Jun to Thu. 20 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

SI1012CR-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between Mon. 10 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.0961

994 - WHS 2


Ships to you between
Mon. 17 Jun to Thu. 20 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1296
50 : USD 0.1037
150 : USD 0.0907
500 : USD 0.081
3000 : USD 0.0733
6000 : USD 0.0694

169238 - WHS 3


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3105
10 : USD 0.2346
100 : USD 0.1403
1000 : USD 0.1035
3000 : USD 0.0909
24000 : USD 0.084
45000 : USD 0.0816
99000 : USD 0.0794

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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We are delighted to provide the SI1012CR-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1012CR-T1-GE3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SI1012CR-T1-GE3 is a single-pole, normally closed (NC) miniature reed switch from Vishay. It is a type of electric switch that uses a reed to open and close an electrical circuit, driven by a magnetic field. The switch has a maximum contact current rating of 10 mA, a voltage drop of 0.7 V, and a maximum switching power of 1.1 W. The SI1012CR-T1-GE3 has an operating temperature range of -40 to 85°C. Its lead form is gull-wing and its lead length is 1.5 mm. Its mounting type is through-hole, and its body size measures 5.1 cm (2.5 mm) long x 1.8 cm (14.5 mm) wide x 1.3 cm (7.1 mm) high.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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