X-On Electronics has gained recognition as a prominent supplier of TSFF5410 infrared emitters - high power across the USA, India, Europe, Australia, and various other global locations. TSFF5410 infrared emitters - high power are a product manufactured by Vishay. We provide cost-effective solutions for infrared emitters - high power, ensuring timely deliveries around the world.

TSFF5410 Vishay

TSFF5410 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.TSFF5410
Manufacturer: Vishay
Category:Infrared Emitters - High Power
Description: Infrared Emitters - High Power 870nm,T-1.75 70mW/sr,+/-22deg.
Datasheet: TSFF5410 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.55
10 : USD 0.9372
100 : USD 0.6938
500 : USD 0.6376
1000 : USD 0.5251
2000 : USD 0.4989
5000 : USD 0.4876
10000 : USD 0.4764
25000 : USD 0.4688
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 1.4056
10 : USD 1.209
100 : USD 0.9438
500 : USD 0.7738
1000 : USD 0.6115
2000 : USD 0.5764
N/A

Obsolete
0 - WHS 3

MOQ : 64
Multiples : 1
64 : USD 0.5265
100 : USD 0.507
300 : USD 0.507
1250 : USD 0.4875
4000 : USD 0.4875
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 1.056
10 : USD 0.8247
1000 : USD 0.8092
4000 : USD 0.808
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1
1 : USD 1.288
10 : USD 1.232
42 : USD 0.3878
115 : USD 0.3668
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
Power Rating
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Forward Current
Forward Voltage
Lens Shape
Viewing Angle
Fall Time
Maximum Forward Current
Rise Time
Factory Pack Quantity :
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We are delighted to provide the TSFF5410 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSFF5410 and other electronic components in the Infrared Emitters - High Power category and beyond.

TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 870 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 22 94 8390 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: f = 24 MHz c Good spectral matching to Si photodetectors DESCRIPTION Compliant to RoHS Directive 2002/95/EC and in TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs accordance to WEEE 2002/96/EC double hetero (DH) technology with high radiant power and Note ** Please see document Vishay Material Category Policy: high speed, molded in a clear, untinted plastic package. www.vishay.com/doc 99902 APPLICATIONS Infrared video data transmission between camcorder and TV set Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSFF5410 70 22 870 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSFF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Rev. 1.8, 24-Aug-11 Document Number: 81091 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSFF5410 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21142 21143 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.3 3 V F p F Temperature coefficient of V I = 1 mA TK - 1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 45 70 135 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 700 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 50 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 22 deg Peak wavelength I = 100 mA 870 nm F p Spectral bandwidth I = 100 mA 40 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 15 ns F r Fall time I = 100 mA t 15 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 24 MHz DC AC c Virtual source diameter d 2.1 mm Rev. 1.8, 24-Aug-11 Document Number: 81091 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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