333 3 VCUT03B1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in LLP1006-2M FEATURES Ultra compact LLP1006-2M package Low package height < 0.4 mm 1 2 1-line ESD protection 21129 Working range 3.5 V Low leakage current < 0.1 A 20855 Low load capacitance C = 12.5 pF D MARKING (example only) ESD immunity acc. IEC 61000-4-2 18 kV contact discharge 20 kV air discharge XY Soldering can be checked by standard vision inspection, 21121 no X-ray necessary Bar = pin 1 marking Pin plating NiPdAu (e4) no whisker growth X = date code PATENT(S): www.vishay.com/patents Y = type code (see table below) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES 3D Models Models ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VCUT03B1-DD1 VCUT03B1-DD1-G-08 8000 8000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VCUT03B1-DD1 LLP1006-2M N 0.72 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VCUT03B1-DD1 PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5 t = 8/20 s single shot I 3.5 A p PPM Pin 1 to pin 2 Peak pulse power P 40 W PP Acc. IEC 61000-4-5 t = 8/20 s single shot p Contact discharge acc. IEC61000-4-2 10 pulses 18 ESD immunity V kV ESD Air discharge acc. IEC61000-4-2 10 pulses 20 Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG PATENT(S): www.vishay.com/patents This Vishay product is protected by one or more United States and international patents. Rev. 2.3, 20-Sep-2019 Document Number: 81148 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VCUT03B1-DD1 www.vishay.com Vishay Semiconductors CUT THE SPIKES WITH VCUT03B1-DD1 The VCUT03B1-DD1 is a bidirectional and symmetrical (BiSy) ESD protection device which clamps positive and negative overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT03B1-DD1 offers a high isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small packag e size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like an ESD strike can be clamped with minimal over- or undershoots. ELECTRICAL CHARACTERISTICS VCUT03B1-DD1 (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 3.5 V RWM Reverse voltage At I = 0.1 A V 3.5 - - V R R Reverse current At V = 3.5 V I -0.1A R Reverse breakdown voltage At I =1 mA V 5.8 6.7 7.5 V BR At I = 1 A V -7.8 9 V PP C Reverse clamping voltage At I = I = 3.5 A V - 9.5 11.5 V PP PPM C At V = 0 V f = 1 MHz C - 12.5 15 pF D Capacitance At V = 2.5 V f = 1 MHz C - 11.5 - pF D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Axis Title Axis Title 120 10000 10000 100 8 s to 100 % Rise time = 0.7 ns to 1 ns 100 80 80 1000 1000 60 20 s to 50 % 60 53 40 100 40 100 27 20 20 0 10 0 10 010 20 30 40 -10 0 10 20 30 40 50 60 70 80 90 100 20557 t (ns) 20548 t (s) 2nd line 2nd line Fig. 1 - ESD Discharge Current Wave Form Fig. 2 - 8/20 s Peak Pulse Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) acc. IEC 61000-4-5 Rev. 2.3, 20-Sep-2019 Document Number: 81148 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line I (%) ESD 1st line 2nd line 2nd line I (%) PPM 1st line 2nd line