Product Information

PBSS4350SSJ

PBSS4350SSJ electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT PBSS4350SSSO8REEL 13" Q1T1

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.1935 ea
Line Total: USD 483.75

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 2500
Multiples : 2500

Stock Image

PBSS4350SSJ
Nexperia

2500 : USD 0.1935
5000 : USD 0.1858
7500 : USD 0.1858
10000 : USD 0.1858

     
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Packagingoptionsscrubbed
Factory Pack Quantity :
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PBSS4350SS 50 V, 2.7 A NPN/NPN low V (BISS) transistor CEsat Rev. 01 3 April 2007 Product data sheet 1. Product prole 1.1 General description NPN/NPN double low V Breakthrough In Small Signal (BISS) transistor in a medium CEsat power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP PNP/PNP complement complement NXP Name PBSS4350SS SOT96-1 SO8 PBSS4350SPN PBSS5350SS 1.2 Features n Low collector-emitter saturation voltage V CEsat n High collector current capability I and I C CM n High collector current gain (h ) at high I FE C n High efciency due to less heat generation n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications n Dual low power switches (e.g. motors, fans) n Automotive 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - 50 V CEO I collector current - - 2.7 A C I peak collector current single pulse --5 A CM t 1ms p 1 R collector-emitter I =2A - 90 130 m CEsat C saturation resistance I = 200 mA B 1 Pulse test: t 300 s 0.02. pPBSS4350SS NXP Semiconductors 50 V, 2.7 A NPN/NPN low V (BISS) transistor CEsat 2. Pinning information Table 3. Pinning Pin Description Simplied outline Symbol 1 emitter TR1 8 5 8765 2 base TR1 3 emitter TR2 TR1 TR2 4 base TR2 5 collector TR2 1 4 1234 006aaa966 6 collector TR2 7 collector TR1 8 collector TR1 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBSS4350SS SO8 plastic small outline package 8 leads body width SOT96-1 3.9 mm 4. Marking Table 5. Marking codes Type number Marking code PBSS4350SS 4350SS 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 2.7 A C I peak collector current single pulse -5 A CM t 1ms p I base current - 0.5 A B 1 P total power dissipation T 25 C - 0.55 W tot amb 2 - 0.87 W 3 - 1.43 W PBSS4350SS 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 3 April 2007 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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