Dual 9 MHz Precision Operational Amplifier Data Sheet OP285 FEATURES PIN CONNECTION Low offset voltage: 250 V OUT A 1 8 V+ OP285 2 7 Low noise: 6 nV/Hz IN A OUT B +IN A 3 6 IN B Low distortion: 0.0006% (Not to Scale) V 4 5 +IN B High slew rate: 22 V/s Wide bandwidth: 9 MHz 8-Lead Narrow Body SOIC Low supply current: 5 mA Low offset current: 2 nA Unity-gain stable 8-lead SOIC N package APPLICATIONS High performance audio Active filters Fast amplifiers Integrators GENERAL DESCRIPTION The OP285 is a precision high-speed amplifier featuring the The combination of low noise, speed and accuracy can be used Butler Amplifier front-end. This new front-end design to build high speed instrumentation systems. Circuits such as combines the accuracy and low noise performance of bipolar instrumentation amplifiers, ramp generators, bi-quad filters and transistors with the speed of JFETs. This yields an amplifier dc-coupled audio systems are all practical with the OP285. For with high slew rates, low offset and good noise performance at applications that require long term stability, the OP285 has a low supply currents. Bias currents are also low compared to guaranteed maximum long term drift specification. bipolar designs. The OP285 is specified over the XINDextended industrial The OP285 offers the slew rate and low power of a JFET (40C to +85C) temperature range. The OP285 is available in amplifier combined with the precision, low noise and low drift an 8-lead SOIC N surface mount package. of a bipolar amplifier. Input offset voltage is laser-trimmed and guaranteed less than 250 V. This makes the OP285 useful in dc-coupled or summing applications without the need for special selections or the added noise of additional offset adjustment circuitry. Slew rates of 22 V/s and a bandwidth of 9 MHz make the OP285 one of the most accurate medium speed amplifiers available. Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 19922018 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. OP285SPECIFICATIONS ( Vs = 15.0 V, TA = 25 C, unless otherwise noted.) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V 35 250 V OS V 40C T +85C 600 V OS A Input Bias Current I V = 0 V 100 350 nA B CM I V = 0 V, 40C T +85C 400 nA B CM A Input Offset Current I V = 0 V 2 50 nA OS CM I V = 0 V, 40C T +85C2 100 nA OS CM A Input Voltage Range V 10.5 10.5 V CM Common-Mode Rejection CMRR V = 10.5 V, CM 40C T +85C 80 106 dB A Large-Signal Voltage Gain A R = 2 k 250 V/mV VO L A R = 2 k , 40C T +85C 175 V/mV VO L A A R = 600 200 V/mV VO L Common-Mode Input Capacitance 7.5 pF Differential Input Capacitance 3.7 pF Long-Term Offset Voltage V Note 1 300 V OS Offset Voltage Drift V /T1 V/C OS OUTPUT CHARACTERISTICS Output Voltage Swing V RL = 2 k 13.5 +13.9 +13.5 V O V RL = 2 k , 40C T +85C 13 +13.9 +13 V O A RL = 600 , V = 18 V 16/+14 V S POWER SUPPLY Power Supply Rejection Ratio PSRR V = 4.5 V to 18 V 85 111 dB S PSRR V = 4.5 V to 18 V, S 40C T +85C80 dB A Supply Current I V = 4.5 V to 18 V, V = 0 V, SY S O 40C T +85C 45mA A I V = 22 V, V = 0 V, SY S O 40C T +85C 5.5 mA A Supply Voltage Range VS 4.5 22 V DYNAMIC PERFORMANCE Slew Rate SR R = 2 k 15 22 V/ s L Gain Bandwidth Product GBP 9 MHz Phase Margin o 62 Degrees Settling Time t To 0.1%, 10 V Step 625 ns s t To 0.01%, 10 V Step 750 ns s Distortion A = 1, V = 8.5 V p-p, V OUT f = 1 kHz, R = 2 k 104 dB L Voltage Noise Density e f = 30 Hz 7 nV/Hz n e f = 1 kHz 6 nV/Hz n Current Noise Density i f = 1 kHz 0.9 pA/Hz n Headroom THD + Noise 0.01%, R = 2 k , V = 18 V >12.9 dBu L S NOTE 1 Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent wafer lots at 125 C, with an LTPD of 1.3. Specifications subject to change without notice. 2 REV. C