JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs CJ3134KDW Dual N-Channel MOSFET I V R MAX D SOT-363 (BR)DSS DS(on) 4.5 V 380m 6 5 450m 2.5V 2 0 V 0.75 A 4 800m 1.8V 1 2 3 FEATURE APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low R Battery Management for Ultra Small Portable Electronics DS(on) Operated at Low Logic Level Gate Drive Logic Level Shift Equivalent to Two CJ3134K MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-source voltage V 20 V DS V 12 V Typical Gate-source voltage GS Continuous drain current (t 10s) I 0.75 A D Power dissipation* P 0.15 W D Thermal resistance from junction to ambient R 833 /W JA Junction temperature T 150 J Storage temperature T -55~ +150 stg * Repetitive rating : Pulse width limited by junction temperature. Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =20V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =10V, VDS = 0V 20 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.35 0.54 1.1 V GS VGS =4.5V, ID =0.65A 270 380 m Drain-source on-resistance (note 1) RDS(on) VGS =2.5V, ID =0.55A 320 450 m VGS =1.8V, ID =0.45A 390 800 m Forward tranconductance (note 1) gFS VDS =10V, ID =0.8A 1.6 S 1.2 Diode forward voltage(note 1) V I =0.15A, VGS = 0V V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 79 120 pF iss Output Capacitance C VDS =16V,VGS =0V,f =1MHz 13 20 pF oss Reverse Transfer Capacitance C 9 15 pF rss SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6.7 ns Turn-on rise time tr 4.8 ns V =4.5V,V =10V, GS DS I =0.5A,R =10 Turn-off delay time td(off) D GEN 17.3 ns Turn-off fall time tf 7.4 ns Total Gate Charge Q 750 pC g VDS =10V,VGS =4.5V,ID =0.25A pC Gate-Source Charge Q 75 gs pC Gate-Drain Charge Q 225 gd Notes : 1. Pulse Test : Pulse width 300s, duty cycle 0.5%. 2. Guaranteed by design, not subject to production testing. www.jscj-elec.com Rev. - 1.0 2