JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3139KW P-Channel Power MOSFET SOT-323 I V R MAX D (BR)DSS DS(on) 95 1 8 TYP 1. GATE 2. SOURCE GENERRAL DESCRIPTION 3. DRAIN This Single P-Channel MOSFET has been designed using advanced Power Trench process to optimize the R DS(ON). APPLICATION FEATURE z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z High-Side Switching z Battery Operated Systems z Low On-Resistance z Power Supply Converter Circuits z Low Threshold z Load/Power Switching Cell Phones, Pagers z Fast Switching Speed MARKING Equivalent Circuit D G S Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source voltage - V 20 DSS V Gate-Source Voltage Typical V 12 GS Drain Current-Continuous I -0.66 D A Drain Current -Pulsed(note1) I -2.64 DM Power Dissipation (note 2) P 200 mW D Thermal Resistance from Junction to Ambient R 625 /W JA Storage Temperature T 150 j Junction Temperature T -55 ~+150 stg Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250A -20 V Gate-Threshold Voltage(note 3) VGS(th) VDS =V , ID =-250A -0.35 -0.45 - 1.1 GS Gate-Body Leakage Current I VDS =0V, VGS =10V 20 A GSS Zero Gate Voltage Drain Current I VDS =-20V, VGS =0V -1 A DSS VGS =-4.5V, ID =-1A 430 520 Drain-Source On-State Resistance(note 3) RDS(on) m VGS =-2.5V, ID =-800mA 624 700 VGS =-1.8V, ID =-500mA 950 Forward Transconductance g VDS =-10V, ID =-540mA 0.8 S FS Dynamic Characteristics(note 4) Input Capacitance C 170 iss Output Capacitance C VDS =-16V,VGS =0V,f =1MHz 25 pF oss Reverse Transfer Capacitance C 15 rss Switching Times (note 4) Turn-On Delay Time td 9 (on) V =-10V, DD Rise Time tr 5.8 ID=-200mA, ns Turn-Off Delay Time td(off) 32.7 V =-4.5V,R =10 GS G Fall Time tf 20.3 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 3) V I =-0.5A, VGS = 0V -1.2 V SD S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at T =25. a 3. Pulse Test : Pulse Width300s, Duty Cycle0.5%. 4. These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2