DMC206E2 Unit: mm Silicon NPN epitaxial planar type For high-frequency amplication DMC506E2 in Mini6 type package Features High transition frequency f T Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: D2 Basic Part Number Dual DSC2G02 (Individual) 1: Emitter (Tr1) 4: Collector (Tr2) 2: Emitter (Tr2) 5: Base (Tr1) Packaging 3: Base (Tr2) 6: Collector (Tr1) DMC206E20R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic Mini6-G4-B JEITA SC-74 Absolute Maximum Ratings T = 25C Code SOT-457 a Parameter Symbol Rating Unit (C1) (B1) (C2) Collector-base voltage (Emitter open) V 30 V CBO 6 5 4 Collector-emitter voltage (Base open) V 20 V Tr1 CEO Tr2 Tr2 Emitter-base voltage (Collector open) V 3 V EBO Tr1 Collector current I 15 mA C Total power dissipation P 300 mW 1 2 3 T (E1) (E2) (B2) Junction temperature T 150 C j Overall Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 10 A, I = 0 3 V EBO E C Base-emitter voltage V V = 6 V, I = 1 mA 0.72 V BE CE C Forward current transfer ratio h V = 6 V, I = 1 mA 65 260 FE CE C 1 h * FE h ratio V = 6 V, I = 1 mA 0.50 0.99 FE CE C (Small/Large) Transition frequency f V = 6 V, I = 1 mA 450 650 MHz T CE C Reverse transfer capacitance(Common emitter) C V = 6 V, I = 1 mA, f = 10.7 MHz 0.6 pF re CE C Power gain PG V = 6 V, I = 1 mA, f = 100 MHz 24 dB CE C Noise gure NF V = 6 V, I = 1 mA, f = 100 MHz 3.3 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Ratio between 2 elements * Publication date: January 2014 Ver. CED 1DMC206E2 DMC206E2 PT-Ta DMC206E2 IC-VCE DMC206E2 hFE-IC P T I V h I T a C CE FE C 350 20 200 T = 25C a V = 6 V CE 300 160 16 T = 85C a 110 A I = 120 A 100 A B 250 25C 12 120 200 90 A 80 A 150 40C 8 70 A 80 60 A 50 A 100 40 A 4 40 30 A 50 0 0 0 1 2 0 40 80 120 160 200 0 2 4 6 8 10 12 10 1 10 10 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DMC206E2 IC-VBE DMC206E2 VCEsat-IC DMC206E2 Cob-VCB V I I V C V CE(sat) C C BE ob CB 2.0 10 20 I / I = 10 I = 0 C B E f = 1 MHz V = 6 V CE 25C T = 25C a 1.6 15 1 T = 85C a 1.2 40C 10 T = 85C a 0.8 25C 1 10 5 40C 0.4 2 0 10 0 1 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 10 10 1 10 100 Base-emitter voltage V (V) Collector current I (mA) Collector-base voltage V (V) BE C CB DMC206E2 fT-IC f I T C 1 600 V = 6 V CE T = 25C a 1 200 800 400 0 1 2 10 1 10 10 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) T CE(sat) Total power dissipation P mW T Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)