DMC4029SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Low Input Capacitance
D
Device V R
(BR)DSS DS(on) max
T = +25C
A
Low On-Resistance
24m @ V = 10V 9.0A
GS
Fast Switching Speed
Q2 40V
32m @ V = 4.5V 7.8A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
-6.5A
45m @ V = -10V
GS
Halogen and Antimony Free. Green Device (Note 3)
Q1 -40V
-5.9A
55m @ V = -4.5V
GS
Qualified to AEC-Q101 Standards for High Reliability
Description Mechanical Data
This new generation MOSFET has been designed to minimize the on- Case: SO-8
state resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound.
DS(on)
performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0
applications. Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Tin Finish annealed over Copper leadframe.
Applications
Solderable per MIL-STD-202, Method 208
e3
DC-DC Converters
Weight: 0.074 grams (approximate)
Power Management Functions
Backlighting
D2 D1
S2 D2
G2
D2
G2 G1
S1 D1
G1
D1
S1
S2
TOP VIEW
Top View N-Channel MOSFET
P-Channel MOSFET
Internal Schematic
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMC4029SSD-13 Standard SO-8 2,500/Tape & Reel
DMC4029SSDQ-13 Automotive SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMC4029SSD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value_Q2 Value_Q1 Units
Drain-Source Voltage 40 -40 V
V
DSS
Gate-Source Voltage 20 20 V
V
GSS
Steady T = +25C 7.0 -5.1
A
I A
D
State 5.6 -4.1
T = +70C
A
Continuous Drain Current (Note 7) V = 10V
GS
T = +25C 9.0 -6.5
A
t<10s I A
D
7.2 -5.2
T = +70C
A
Maximum Body Diode Forward Current (Note 7) 2.5 -2.5 A
I
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) 70 -40 A
I
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
T = +25C 1.3
A
Total Power Dissipation (Note 6) P W
D
0.8
T = +70C
A
Steady state 98
Thermal Resistance, Junction to Ambient (Note 6) R C/W
JA
t<10s 59
1.8
T = +25C
A
Total Power Dissipation (Note 7) P W
D
1.1
T = +70C
A
Steady state 71
Thermal Resistance, Junction to Ambient (Note 7) R
JA
t<10s 43 C/W
Thermal Resistance, Junction to Case (Note 7) 11.8
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics N-Channel Q2 (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1.0 3.0 V
V V = V , I = 250A
GS(th) DS GS D
15 24
V = 10V, I = 6A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
20 32
V = 4.5V, I = 5A
GS D
Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 1060
iss
V = 20V, V = 0V,
DS GS
Output Capacitance C 84 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 58
rss
Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge (V = 4.5V) Q 8.8
GS g
Total Gate Charge (V = 10V) Q 19.1
GS g
nC V = 20V, I = 8A
DS D
Gate-Source Charge 3.0
Q
gs
Gate-Drain Charge 2.5
Q
gd
Turn-On Delay Time 5.3
t
D(on)
Turn-On Rise Time 7.1
t V = 25V, R = 2.5
r DD L
nS
Turn-Off Delay Time t 15.1 V = 10V, R = 3
D(off) GS G
Turn-Off Fall Time t 4.8
f
Body Diode Reverse Recovery Time t 10.5 nS I = 8A, di/dt = 100A/s
rr F
Body Diode Reverse Recovery Charge Q 4.15 nC I = 8A, di/dt = 100A/s
rr F
2 of 8 March 2014
DMC4029SSD
Diodes Incorporated
www.diodes.com
Document number: DS36350 Rev. 3 - 2
ADVANCE INFORMATION
NEW PRODUCT