DMG301NU 25V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage 4 V = 4.5V 0.26A GS 25V Low Input Capacitance 5 V = 2.7V 0.23A GS Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET is designed to minimize the on-state Halogen and Antimony Free. Green Device (Note 3) resistance (R ) and yet maintain superior switching performance, DS(ON) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT23 DC-DC Converters Case Material: Molded Plastic. UL Flammability Classification Power Management Functions Rating 94V-0 Battery Operated Systems and Solid-State Relays Moisture Sensitivity: Level 1 per J-STD-020 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminals: Solderable per MIL-STD-202, Method 208 e3 Memories, Transistors, etc. Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D D G ESD HBM >6kV G S Gate Protection S Diode Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Compliance Case Packaging DMG301NU-7 Standard SOT23 3,000/Tape & Reel DMG301NU-13 Standard SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG301NU Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 25 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 0.26 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.21 T = +70C A Steady T = +25C 0.23 A Continuous Drain Current (Note 6) V = 2.7V I A GS D State 0.18 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 1.5 A DM Maximum Body Diode Continuous Current (Note 6) I 0.5 A S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.32 Total Power Dissipation P W D (Note 6) 0.4 (Note 5) 369 Thermal Resistance, Junction to Ambient R JA (Note 6) 296 C/W Thermal Resistance, Junction to Case (Note 6) 115 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 25 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1.0 A I V = 20V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.7 1.1 V V V = V , I = 250A GS(th) DS GS D 4 V = 4.5V, I = 0.4A GS D Static Drain-Source On-Resistance R DS(ON) 5 V = 2.7V, I = 0.2A GS D Forward Transconductance g 1 S V = 5V, I = 0.4A FS DS D Diode Forward Voltage V 0.76 1.2 V V = 0V, I = 0.29A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 27.9 42 Input Capacitance C iss V = 10V, V = 0V, DS GS 6.1 9.2 Output Capacitance C pF oss f = 1.0MHz 2.0 3.0 Reverse Transfer Capacitance C rss Gate Resistance 26.4 RG VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge 0.36 Q g V = 4.5V, V = 5V, GS DS Gate-Source Charge 0.06 nC Q gs I = 0.2A D Gate-Drain Charge 0.04 Q gd 2.9 Turn-On Delay Time t D(on) 1.8 Turn-On Rise Time t r V = 4.5V, V = 6V GS DS nS 6.6 I = 0.5A, R = 50 Turn-Off Delay Time t D G D(off) 2.3 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMG301NU September 2014 Diodes Incorporated www.diodes.com Document number: DS36226 Rev. 3 - 2