DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed -9.9A 11m V = -20V GS -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 17m V = -6V -8.2A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.075 grams (approximate) DC-DC Converters D SO-8 S D S D G S D ESD PROTECTED Gate Protection S G Diode D Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG4407SSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4407SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS T = +25C Steady A -9.9 A I D State -7.9 T = +70C A Continuous Drain Current (Note 6) V = -20V GS T = +25C -12.5 A t<10s I A D -10.0 T = +70C A Steady T = +25C -8.2 A I A D State -6.5 T = +70C A Continuous Drain Current (Note 6) V = -6V GS T = +25C -11.0 A t<10s A I D -8.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3.0 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -80 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.45 W D Steady State 88 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 50 C/W Total Power Dissipation (Note 6) P 1.82 W D Steady State 70 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 41 C/W Thermal Resistance, Junction to Case (Note 6) R 7.6 C/W JC Operating and Storage Temperature Range T T -50 to 155 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.7 -3.0 V V = V , I = -250A GS(th) DS GS D 9 11 V = -20V, I = 12A GS D Static Drain-Source On-Resistance R 10 13 m V = -10V, I = 10A DS (ON) GS D 12.7 17 V = -6V, I = 10A GS D Forward Transfer Admittance Y 21 S V = -5V, I = -10A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2246 pF C iss V = -15V, V = 0V, DS GS Output Capacitance 352 pF C oss f = 1.0MHz Reverse Transfer Capacitance 294 pF C rss Gate resistance 5.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q 20.5 nC GS g Total Gate Charge (V = 10V) Q 41 nC V = -10V, V = -15V, GS g GS DS Gate-Source Charge Q 7.6 nC I = -12A gs D Gate-Drain Charge Q 8.0 nC gd Turn-On Delay Time t 11.3 ns D(on) Turn-On Rise Time t 15.4 ns r V = -15V, V = -10V, DD GS Turn-Off Delay Time 38.0 ns R = 1.25, R = 3 , t L G D(off) Turn-Off Fall Time 22.0 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 September 2013 DMG4407SSS Diodes Incorporated www.diodes.com Document number: DS35540 Rev. 6 - 2 NEW PRODUCT