DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A ESD Protected Up To 2kV 20m V = 10V 6.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m V = 4.5V GS 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V 26m V = 2.5V 6.1A GS Qualified to AEC-Q101 Standards for High Reliability 36m V = 1.8V 5.2A GS Mechanical Data Description Case: POWERDI3030-8 This new generation MOSFET has been designed to minimize the on- Case Material: Molded Plastic, Green Molding Compound. state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Weight: 0.0072 grams (approximate) Applications Power management functions Load Switch POWERDI3030-8 Drain Drain S2 G2 S1 G1 Gate 1 Gate 2 D D Gate Gate D Protection Protection Source 1 Source 2 D Diode Diode Internal Schematic ESD PROTECTED Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2028UFDH-7 POWERDI3030-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2028UFDH Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage (Note 5) V 12 V GSS Steady T = +25C 6.8 A I A D State = +70C 5.8 T A Continuous Drain Current (Note 7) V = 10V GS T = +25C 8.8 A t<10s A I D 7.0 T = +70C A Maximum Body Diode Forward Current (Note 7) I 2 A S Pulsed Drain Current (10s pulse, Duty cycle = 1%) I 40 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.1 W D Steady state 118 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 72 Total Power Dissipation (Note 7) P 1.5 W D Steady state 82 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 7) 14 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 1 V V = V , I = 250 A GS(th) DS GS D 16 20 V = 10V, I = 4A GS D 17 22 V = 4.5V, I = 4A GS D Static Drain-Source On-Resistance R m DS (ON) 19 26 V = 2.5V, I = 4A GS D 24 36 V = 1.8V, I = 4A GS D Forward Transfer Admittance Y 8 S V = 5V, I = 12A fs DS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 151 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 91 Output Capacitance C pF oss f = 1.0MHz 32 Reverse Transfer Capacitance C pF rss 200 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 8.5 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 1.6 nC Q gs I = 6.5A D Gate-Drain Charge 2.8 nC Q gd Turn-On Delay Time 53 ns t D(on) 77 Turn-On Rise Time t ns V = 10V, V = 4.5V, r GS DS 561 Turn-Off Delay Time t ns R = 6 , R = 1.0 , I = 1A D(off) G L D 234 Turn-Off Fall Time t ns f Notes: 5. AEC-Q101 V maximum is 9.6V. GS 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 January 2013 DMN2028UFDH Diodes Incorporated www.diodes.com Document number: DS35805 Rev. 5 - 2