DMN2400UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte Tin annealed over Copper leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 ESD Protected up to 2kV Terminal Connections: See Diagram Lead Free By Design/RoHS Compliant (Note 1) Weight: 0.006 grams (approximate) Gree Device (Note 2) Qualified to AEC-Q101 standards for High Reliability D G S 2 1 1 SOT-563 S G D 2 2 1 Top View Top View Bottom View ESD PROTECTED TO 2kV Internal Schematic Ordering Information (Note 3) Part Number Case Packaging DMN2400UV-7 SOT-563 3,000/Tape & Reel DMN2400UV-13 SOT-563 10,000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DMN2400UV Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage 12 V V GSS Steady T = 25 C 1.33 A Continuous Drain Current (Note 4) I A D State 0.84 T = 85 C A Pulsed Drain Current 3 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation (Note 4) P 530 mW D Thermal Resistance, Junction to Ambient 233.8 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 100 nA V = 20V, V = 0V J DSS DS GS - - 1.0 V = 4.5V, V = 0V GS DS Gate-Source Leakage I A GSS - - 50 V = 10V, V = 0V GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 0.5 - 0.9 V V = V , I = 250 A V GS(th) DS GS D - 0.3 0.48 V = 5.0V, I = 200mA GS D - 0.35 0.5 V = 4.5V, I = 600mA GS D Static Drain-Source On-Resistance - 0.45 0.7 R V = 2.5V, I = 500mA DS (ON) GS D - 0.55 0.9 V = 1.8V, I = 350mA GS D - 0.65 1.5 V = 1.5V, I = 50mA GS D Forward Transfer Admittance Y - 1.4 - S V = 10V, I = 400mA fs DS D V = 0V, I = 150mA, GS S Diode Forward Voltage (Note 5) 0.7 1.2 V V SD f = 1.0MHz DYNAMIC CHARACTERISTICS (Note 6) - 36.0 - Input Capacitance C pF iss V =16V, V = 0V, DS GS Output Capacitance - 5.7 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 4.2 - pF C rss Gate Resistance - 68 - R V = 0V, V = 0V, g DS GS Total Gate Charge - 0.5 - nC Q g V =4.5V, V = 10V, GS DS - 0.07 - Gate-Source Charge Q nC gs I =250mA D - 0.1 - Gate-Drain Charge Q nC gd 4.06 Turn-On Delay Time t - - ns D(on) V = 10V, V = 4.5V, DD GS 7.28 Turn-On Rise Time t - - ns r R = 47 , R = 10 , L G 13.74 Turn-Off Delay Time t - - ns D(off) I = 200mA D Turn-Off Fall Time - 10.54 - ns t f 2 Notes: 4. Device soldered onto FR-4 PCB, minimum recommended soldering pad dimensions (25.4mm x 25.4mm x1.6mm, 2oz Cu pad: 0.18mm x 6). 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 2 of 6 January 2011 DMN2400UV Diodes Incorporated www.diodes.com Document number: DS31852 Rev. 7 - 2