DMN2550UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height I max D V R max 2 (BR)DSS DS(ON) 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25C A 0.45 V = 4.5V Low On-Resistance GS 0.55 V = 2.5V GS Very Low Gate Threshold Voltage, 1.0V Max 20V 0.6 A 0.75 V = 1.8V GS ESD Protected Gate 1.0 V = 1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0806-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish NiPdAu over Copper Leadframe. General Purpose Interfacing Switch e4 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.001 grams (Approximate) Analog Switch Drain Body Diode Gate S D G Gate Protection Source Diode Top View ESD PROTECTED Package Pin Configuration Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2550UFA-7B X2-DFN0806-3 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2550UFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 0.6 A A Continuous Drain Current (Note 5) V = 4.5V I GS D State 0.5 T = +70C A Pulsed Drain Current (Note 6) 1.5 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady State P 360 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) 353 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 100 nA V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250 A GS(th) DS GS D 0.28 0.45 V = 4.5V, I = 200mA GS D 0.33 0.55 V = 2.5V, I = 100mA GS D Static Drain-Source On-Resistance R DS(ON) 0.4 0.75 V = 1.8V, I = 50mA GS D 0.5 1.0 V = 1.5V, I = 10mA GS D Diode Forward Voltage 1.0 V V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 52.5 pF C iss V = 16V, V = 0V, DS GS Output Capacitance 6.3 pF C oss f = 1.0MHz Reverse Transfer Capacitance 5.2 pF C rss Total Gate Charge 0.88 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.11 nC gs I = 250mA D Gate-Drain Charge Q 0.10 nC gd Turn-On Delay Time t 7.1 ns D(on) Turn-On Rise Time t 11 ns r V = 10V, V = 4.5V, DD GS Turn-Off Delay Time t 105 ns R = 47 , R = 10 D(off) L G Turn-Off Fall Time t 36 ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 September 2014 DMN2550UFA Diodes Incorporated www.diodes.com Document number: DS37120 Rev. 2 - 2 NEW PRODUCT