DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET I Max D V R Max (BR)DSS DS(ON) Low On-Resistance T = 25C A Very Low Gate Threshold Voltage, 1.0V Max 0.99 V = 4.5V 450mA GS Low Input Capacitance 1.2 V = 2.5V 400mA GS Fast Switching Speed 20V 1.8 V = 1.8V 330mA GS Ultra-Small Surface Mount Package 1mm x 1mm 2.4 V = 1.5V 300mA GS Low Package Profile, 0.45mm Maximum Package Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance An Automotive-Compliant Part is Available Under Separate (R ) and yet maintain superior switching performance, making it DS(ON) Datasheet (DMN2990UDJQ) ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT963 Case Material: Molded Plastic,Gree Molding Compound. General Purpose Interfacing Switch UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Analog Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate) D G S 1 2 2 SOT963 S G D 1 1 2 ESD PROTECTED Top View Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number Case Packaging DMN2990UDJ-7 SOT963 10K/Tape & Reel DMN2990UDJ-7A SOT963 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2990UDJ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 8 V V GSS Steady T = +25C 450 A mA Continuous Drain Current (Note 7) V = 4.5V I GS D State 350 T = +70C A Steady T = +25C 330 A Continuous Drain Current (Note 7) V = 1.8V I mA GS D State 220 T = +70C A Pulsed Drain Current (Note 8) 800 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 7) 350 mW P D Thermal Resistance, Junction to Ambient 360 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250A DSS GS D - - 50 V = 5V, V = 0V DS GS nA Zero Gate Voltage Drain Current T = +25C I C DSS - - 100 VDS = 16V, VGS = 0V Gate-Source Leakage - - 100 nA I V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 0.4 - 1.0 V V V = V , I = 250A GS(TH) DS GS D - 0.60 0.99 V = 4.5V, I = 100mA GS D - 0.75 1.2 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance - 0.90 1.8 R V = 1.8V, I = 20mA DS(ON) GS D - 1.2 2.4 V = 1.5V, I = 10mA GS D - 2.0 - V = 1.2V, I = 1mA GS D Forward Transfer Admittance Y 180 - - ms V = 10V, I = 400mA fs DS D Diode Forward Voltage (Note 8) V - 0.6 1.0 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C - 27.6 - pF iss V = 16V, V = 0V, DS GS Output Capacitance - 4.0 - pF Coss f = 1.0MHz Reverse Transfer Capacitance - 2.8 - pF C rss Total Gate Charge - 0.5 - nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge - 0.07 - nC Q gs I = 250mA D Gate-Drain Charge - 0.07 - nC Q gd Turn-On Delay Time - 4.0 - ns t D(ON) V = 10V, V = 4.5V, DD GS Turn-On Rise Time t - 3.3 - ns R R = 47, R = 10, L g Turn-Off Delay Time t - 19.0 - ns D(OFF) I = 200mA D Turn-Off Fall Time t - 6.4 - ns F Notes: 7. Device mounted on FR-4 PCB, with minimum recommended pad layout. 8. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2990UDJ February 2017 Diodes Incorporated www.diodes.com Document number: DS35401 Rev. 8 - 2 NEW PRODUCT