DMN3042L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
V R max I max
(BR)DSS DS(ON) D
Low Gate Threshold Voltage
Low Input Capacitance
26.5m @ V = 10V 5.8A
GS
Fast Switching Speed
30V
32m @ V = 4.5V 5.0A
GS
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications Mechanical Data
This MOSFET is designed to minimize the on-state resistance Case: SOT23
(R ) and yet maintain superior switching performance, making it
DS(on) Case Material: Molded Plastic, Green Molding Compound.
ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Battery Charging
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Power Management Functions Solderable per MIL-STD-202, Method 208
DC-DC Converters Terminals Connections: See Diagram Below
Portable Power Adaptors Weight: 0.008 grams (Approximate)
SOT23
D
D
G
G S
S Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN3042L-7 SOT23 3,000/Tape & Reel
DMN3042L-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3042L
Maximum Ratings (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C 5.8
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State 4.0
T = +70C
A
Maximum Body Diode Forward Current (Note 6) 1.5 A
I
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) 30 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 0.72 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) Steady State 171 C/W
R
JA
Power Dissipation (Note 6) 1.4 W
P
D
Thermal Resistance, Junction to Ambient (Note 6) Steady State R 93 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.6 1.4 V V = V , I = 250A
GS(th) DS GS D
21 26.5 V = 10V, I = 5.8A
GS D
Static Drain-Source On-Resistance R 23 32 m V = 4.5V, I = 5.0A
DS (ON) GS D
29 48 V = 2.5V, I = 4.0A
GS D
Diode Forward Voltage 0.7 1.2 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 570 860
C
iss
V = 15V, V = 0V
DS GS
Output Capacitance 63 95 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 53 80
C
rss
Gate Resistance 3.2 4.5
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge (V = 10V) Q 13.3 20
GS g
Total Gate Charge (V = 4.5V) Q 6.1 8
GS g
nC
V = 15V, I = 6.9A
DS D
Gate-Source Charge Q 1.0 1.5
gs
Gate-Drain Charge Q 1.6 2.5
gd
Turn-On Delay Time t 1.5 2.4
D(on)
Turn-On Rise Time t 3.3 5
r V = 10V, V = 15V, R = 3,
GS DD G
nS
Turn-Off Delay Time 13.9 22 I = 6.9A
t D
D(off)
Turn-Off Fall Time 4.9 7
t
f
Body Diode Reverse Recovery Time 7.8 12 nS
t I = 5A, dI/dt = 100A/s
rr S
Body Diode Reverse Recovery Charge 1.9 3 nC
Q I = 5A, dI/dt = 100A/s
rr S
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
January 2015
DMN3042L
Diodes Incorporated
www.diodes.com
Document number: DS37539 Rev. 2- 2