DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A 13m V = 10V 10.3A density end products GS 60V 18m V = 4.5V 8.8A Occupies just 33% of the board area occupied by SO-8 enabling GS smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: POWERDI 3333-8 Applications Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN6013LFG-7 2,000/Tape & Reel POWERDI 3333-8 DMN6013LFG-13 3,000/Tape & Reel POWERDI 3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN6013LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 10.3 A A I D 8.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 45 C I A D 28 T = +100C C Pulsed Drain Current (10s pulse, duty cycle = 1%) I 58.3 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Avalanche Current, L = 0.1mH I 33.3 A AS Avalanche Energy, L = 0.1mH E 56.8 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1 W D Steady state 123 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 69 Total Power Dissipation (Note 6) P 2.1 W D Steady state 60 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t < 10s 34 Total Power Dissipation (Note 6) P 40 W D Thermal Resistance, Junction to Case (Note 6) 6.7 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current, T = +25C I 1 A V = 60V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.8 3 V V = V , I = 250 A GS(th) DS GS D 9.3 13 V = 10V, I = 10A GS D Static Drain-Source On-Resistance R m DS(ON) 12.3 18 V = 4.5V, I = 8A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 2577 iss V = 30V, V = 0V, DS GS Output Capacitance pF C 162 oss f = 1MHz Reverse Transfer Capacitance pF C 132 rss Gate Resistance 0.9 R V = 0V, V = 0V, f = 1MHz g DS GS 26.6 Total Gate Charge (V = 4.5V) Q nC GS g 55.4 Total Gate Charge (V = 10V) Q nC GS g V = 30V, I = 10A DS D 9.3 Gate-Source Charge Q nC gs 12.6 Gate-Drain Charge Q nC gd 6.2 Turn-On Delay Time t ns D(on) Turn-On Rise Time 9.9 ns t V = 10V, V = 30V, r GS DS Turn-Off Delay Time 27.6 ns R = 3 , I = 10A t G D D(off) Turn-Off Fall Time 11.7 ns t f Body Diode Reverse Recovery Time 9.4 nS t rr I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 18.6 nC Q rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 June 2014 DMN6013LFG Diodes Incorporated www.diodes.com Document number: DS36958 Rev. 1 - 2 ADVANCE INFORMATION