DMN62D1LFDQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 2 V = 4V 400mA GS 60V Low Input/Output Leakage 2.5 V = 2.5V 350mA GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data Case: U-DFN1212-3 (Type C) This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic. UL Flammability Classification automotive applications. It is qualified to AEC-Q101, supported by a Rating 94V-0 PPAP, and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe. Solderable per MIL- Backlighting STD-202, Method 208 e4 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Weight: 0.005 grams (Approximate) D G pin S G D G Gate Protection S Diode ESD PROTECTED Top View Bottom View Equivalent Circuit Pin-Out Top View Ordering Information (Note 5) Part Number Compliance Case Packaging DMN62D1LFDQ-7 Standard U-DFN1212-3 (Type C) 3000/Tape & Reel DMN62D1LFDQ-13 Standard U-DFN1212-3 (Type C) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN62D1LFDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 400 Continuous Drain Current (Note 6) V = 4V I mA GS D 310 T = +70C A Pulsed Drain Current (Note 7) 1 A I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) 0.5 W PD 237 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 60V, V = 0V J DSS DS GS 100 nA V = 5V, V = 0V GS DS Gate-Source Leakage I 500 nA V = 10V, V = 0V GSS GS DS 2 A V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.6 1 V V = V , I = 250A GS(TH) DS GS D 0.8 2 VGS = 4V, ID = 100mA 1 2.5 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R DS(ON) 1.4 3 V = 1.8V, I = 50mA GS D 1.8 V = 1.5V, I = 10mA GS D Forward Transfer Admittance 1.8 S Y V = 10V, I = 200mA fs DS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 36 iss V = 25V, V = 0V, DS GS Output Capacitance C 4.6 pF oss f = 1MHz Reverse Transfer Capacitance C 3.6 rss Gate Resistance R 59.8 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 0.55 g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.08 nC Q gs I = 250mA D Gate-Drain Charge 0.12 Q gd Turn-On Delay Time 2.1 ns t D(ON) V = 10V, V = 30V, GS DS Turn-On Rise Time 2.8 ns t R R = 150, R = 25, L G Turn-Off Delay Time t 21 ns D(OFF) I = 200mA D Turn-Off Fall Time t 13.9 ns F Notes: 6. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 June 2018 DMN62D1LFDQ www.diodes.com Diodes Incorporated Document number: DS41130 Rev. 1 - 2