DMP1009UFDFQ 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I Max D 2 BVDSS RDS(ON) Max PCB Footprint of 4mm T = +25C A Low On-Resistance 11m VGS = -4.5V -11A Fast Switching Speed 100% Unclamped Inductive Switching (Test in Production) 14m V = -3.7V -9.7A GS -12V Ensures More Reliability 19m V = -2.5V -8.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) 30m V = -1.8V -6.6A GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications This MOSFET is designed to meet the stringent requirements of Mechanical Data automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Case: U-DFN2020-6 Case Material: Molded Plastic, Green Molding Compound. Battery Management Application UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable DC-DC Converters per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) U-DFN2020-6 (Type F) D G Pin1 S Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP1009UFDFQ-7 U-DFN2020-6 (Type F) 3,000/Tape & Reel DMP1009UFDFQ-13 U-DFN2020-6 (Type F) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP1009UFDFQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS -11 T = +25C Steady A A I D State -8.7 T = +70C A Continuous Drain Current V = -4.5V (Note 7) GS -15 T = +25C A t<5s A I D -12 TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -70 A I DM Maximum Body Diode Continuous Current (Note 7) -2.5 A I S Avalanche Current (Note 8) L = 0.1mH -24 A I AS Avalanche Energy (Note 8) L = 0.1mH E 31 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 0.8 W A D Steady State 152 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<5s 81 Total Power Dissipation (Note 7) T = +25C P 2.0 W A D Steady State 63 Thermal Resistance, Junction to Ambient (Note 7) R JA t<5s 34 C/W Thermal Resistance, Junction to Case (Note 7) Steady State 15 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -12 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -100 nA V = -9.6V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -0.3 -1.0 V V V = V , I = -250A GS(TH) DS GS D 8.3 11 V = -4.5V, I = -5A GS D 9 14 V = -3.7V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 12 19 V = -2.5V, I = -4A GS D 16 30 V = -1.8V, I = -1A GS D Diode Forward Voltage V -0.8 -1.2 V V = 0V, I = -10A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1860 iss V = -10V, V = 0V, DS GS Output Capacitance C 498 pF oss f = 1.0MHz Reverse Transfer Capacitance C 416 rss Gate Resistance R 11 V = 0V, V = 0V, f = 1MHz g DS GS 26 Total Gate Charge (V = -4.5V) Q GS g 44 Total Gate Charge (V = -8V) Q GS g nC V = -6V, I = -10A DS D Gate-Source Charge 3.3 Q gs Gate-Drain Charge 8.1 Q gd Turn-On Delay Time 7.0 t D(ON) Turn-On Rise Time t 10.6 V = -6V, V = -4.5V, R DS GS ns Turn-Off Delay Time t 62.2 R = 1, I = -8A D(OFF) g D Turn-Off Fall Time t 61 F Reverse Recovery Time t 34.4 ns RR I = -12A, di/dt = 500A/s F Reverse Recovery Charge Q 28.1 nC RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 May 2019 DMP1009UFDFQ www.diodes.com Diodes Incorporated Datasheet number: DS41367 Rev. 2 - 2