DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized I max DS(ON) D V R max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher C density end products 5.5m V = -10V -40A GS Occupies just 33% of the board area occupied by SO-8 enabling -20V -40A 7.0m VGS = -4.5V smaller end product -40A 9.0m V = -2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: POWERDI 3333-8 (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(ON) ideal for high- efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.030 grams (Approximate) Power Management Functions POWERDI 3333-8 D Pin 1 S S S G G D D D D S Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2007UFG-7 POWERDI3333-8 2,000/Tape & Reel DMP2007UFG-13 POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2007UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS T = +25C A -18.0 Steady -14.5 A Continuous Drain Current (Note 5) V = -10V T = +70C I GS A D State -40 T = +25C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current (Note 5) I -2.2 A S Avalanche Current L=0.1mH I -30 A AS Avalanche Energy L=0.1mH 50 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 2.3 T = +25C A Total Power Dissipation (Note 5) P W D 41 T = +25C C (Note 5) 58 Thermal Resistance, Junction to Ambient R JA (Note 6) 143 C/W Thermal Resistance, Junction to Case 3.0 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -16V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -1.3 V V V = V , I = -250A GS(TH) DS GS D 4.4 5.5 V = -10V, I = -15A GS D Static Drain-Source On-Resistance R 4.9 7.0 m V = -4.5V, I = -15A DS(ON) GS D 6.5 9.0 V = -2.5V, I = -10A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -10A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4,621 iss V = -10V, V = 0V DS GS 652 Output Capacitance C pF oss f = 1.0MHz 403 Reverse Transfer Capacitance Crss Gate Resistance 3.2 R V = 0V, V = 0V, f = 1.0MHz G DS GS 39 Total Gate Charge (V = -4.5V) Q GS g 85 Total Gate Charge (V = -10V) Q GS g nC V = -10V, I = -20A DD D Gate-Source Charge 8.3 Q gs 9.6 Gate-Drain Charge Q gd 10.1 Turn-On Delay Time t D(ON) 9.8 Turn-On Rise Time t R V = -4.5V, V = -10V, GS DD ns 61 Turn-Off Delay Time t R = 1, I = -10A D(OFF) G D 51 Turn-Off Fall Time tF 20.1 Reverse Recovery Time ns t I = -10A, di/dt = 100A/s RR F Reverse Recovery Charge 10.1 nC Q I = -10A, di/dt = 100A/s rr F Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2007UFG October 2015 Diodes Incorporated www.diodes.com Document number: DS37943 Rev. 3 - 2 ADVANCE INFORMATION ADVANNECWE PINRFOODRUMCATT ION