DMP2069UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Input Capacitance I max D Fast Switching Speed V R max (BR)DSS DS(ON) T = 25C A Low Input/Output Leakage ESD Protected Up To 3kV 54m V = -4.5V -2.5A GS Lead Free By Design/RoHS Compliant (Note 1) -20V Gree Device, Halogen and Antimony Free (Note 2) 90m V = -1.8V -1.8A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: X2-DFN2015-3 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish NiPdAu over Copper leadframe. Solderable Power Management Functions per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) X2-DFN2015-3 S D G ESD PROTECTED TO 3kV Top View Bottom View Internal Schematic Ordering Information (Note 3) Part Number Case Packaging DMP2069UFY4-7 X2-DFN2015-3 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DMP2069UFY4 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 8 V GSS T = 25C Steady A -2.5 Continuous Drain Current (Note 4) A I D State -2.2 T = 70C A Pulsed Drain Current (Note 5) -12 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) P 0.53 W D Thermal Resistance, Junction to Ambient T = 25C R 231 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -20 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = 25C I -1.0 A V = -20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V -0.3 -0.55 -1.0 V V = V , I = -250A GS(th) DS GS D 36 54 V = -4.5V, I = -2.5A GS D Static Drain-Source On-Resistance 46 69 m R V = -2.5V, I = -2.2A DS (ON) GS D 60 90 V = -1.8V, I = -2.0A GS D Forward Transfer Admittance 8 S Y V = -5V, I = -2.5A fs DS D DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 214 pF iss V = -10V, V = 0V DS GS Output Capacitance C 104 pF oss f = 1.0MHz Reverse Transfer Capacitance C 25 pF rss Gate Resistnace R 250 V = 0V, V = 0V, f = 1.0MHz g DS GS SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Q 9.1 nC g Gate-Source Charge Q 1.5 nC V = -4.5V, V = -10V, I = -4A gs GS DS D Gate-Drain Charge Q 1.7 nC gd Turn-On Delay Time 80.4 160 ns t D(on) Turn-On Rise Time 155.1 210 ns t V = -10V, V = -4.5V, r DS GS Turn-Off Delay Time 688.1 1376 ns R = 2.5, R = 3.0 t D G D(off) Turn-Off Fall Time 423.8 848 ns t f Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 January 2012 DMP2069UFY4 Diodes Incorporated www.diodes.com Document number: DS31949 Rev. 5 - 2 NEW PRODUCT