DMP25H18DLFDE
250V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
0.6mm Profile Ideal for Low-Profile Applications
I
D max
2
V R
(BR)DSS DS(ON) max
PCB Footprint of 4mm
T = +25C
A
Low Gate Threshold Voltage
-0.26A
14 @ V = -10V
GS
-250V
Low On-Resistance
-0.23A
18 @ V = -3.5V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state
Mechanical Data
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case: U-DFN2020-6
making it ideal for high-efficiency power management applications.
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
General Purpose Interfacing Switch Terminals: Finish NiPdAu over Copper Leadframe.
Load Switching Solderable per MIL-STD-202, Method 208 e4
Battery Management Application Weight: 0.0065 grams (Approximate)
Power Management Functions
D
U-DFN2020-6
Pin1
G
S
Bottom View
Pin Out Equivalent Circuit
Bottom View
Ordering Information (Note 4)
Part Number Marking Reel Size (inches) Quantity per Reel
DMP25H18DLFDE-7 H8 7 3,000
DMP25H18DLFDE-13 H8 13 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP25H18DLFDE
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -250 V
DSS
Gate-Source Voltage 40 V
VGSS
Steady T = +25C -0.26
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State -0.21
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle 1%) I -0.8 A
DM
Maximum Body Diode Continuous Current (Note 6) I 1.2 A
S
Thermal Characteristics
Characteristic Symbol Value Units
(Note 5) 0.6
Total Power Dissipation P W
D
(Note 6) 1.4
(Note 5) 191
Thermal Resistance, Junction to Ambient
R
JA
(Note 6) 86
C/W
(Note 6)
Thermal Resistance, Junction to Case R 17
JC
Operating and Storage Temperature Range -55 to +150 C
TJ, TSTG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV -250 V V = 0V, I = -1mA
DSS GS D
Zero Gate Voltage Drain Current T = +25C I -1 A V = -250V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 40V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V -0.5 -1.7 -2.5 V V = V , I = -1mA
GS(th) DS GS D
10 14 V = -10V, I = -200mA
GS D
Static Drain-Source On-Resistance R
DS (ON)
13 18
V = -3.5V, I = -100mA
GS D
Diode Forward Voltage -0.8 -1.2 V
V V = 0V, I = -200mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 81 pF
C
iss
V = -25V, V = 0V,
DS GS
Output Capacitance 14 pF
C
oss
f = 1.0MHz
4
Reverse Transfer Capacitance C pF
rss
13
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
2.8
Total Gate Charge (V = -10V) Q nC
GS g
0.3
Gate-Source Charge Q nC V = -25V, I = -200mA
gs DS D
0.6
Gate-Drain Charge Q nC
gd
7.5
Turn-On Delay Time t ns
D(on)
Turn-On Rise Time 25 ns
tr V = -30V, I = -200mA
DS D
Turn-Off Delay Time 124 ns V = -10V, R = 50
t GS G
D(off)
Turn-Off Fall Time 95 ns
t
f
Reverse Recovery Time 85 ns
t
rr
I = -1.0A, di/dt = 100A/s
F
Reverse Recovery Charge 294 uC
Q
rr
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
January 2015
DMP25H18DLFDE
www.diodes.com Diodes Incorporated
Datasheet number: DS37298 Rev. 3 - 2
ADVANCE INFORMATION
ADVANCED INFORMATION