DMP3008SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = 25C Small Form Factor Thermally Efficient Package Enables Higher A Density End Products 17m V = -10V -8.6A GS Occupies Just 33% of the Board Area Occupied by SO-8 Enabling -30V Smaller End Product 25m V = -4.5V -7.1A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: PowerDI 3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.008 grams (Approximate) DC-DC Converters Drain PowerDI3333-8 Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP3008SFGQ-7 PowerDI3333-8 2,000/Tape & Reel DMP3008SFGQ-13 PowerDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP3008SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage 20 V VGSS Steady T = +25C -8.6 A A I D State -7.0 T = +70C A Continuous Drain Current (Note 7) VGS = -10V T = +25C -11.7 A t<10s I A D -9.3 T = +70C A Steady TA = +25C -7.1 A I D State -5.6 T = +70C A Continuous Drain Current (Note 7) V = -4.5V GS T = +25C -9.6 A t<10s I A D -7.6 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -80 A DM Maximum Continuous Body Diode Forward Current (Note 7) -3.0 A IS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 0.9 W D Steady State 140 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 72 C/W Total Power Dissipation (Note 7) P 2.2 W D Steady State 57 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 30 C/W Thermal Resistance, Junction to Case (Note 7) 7.1 C/W RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 8 DMP3008SFGQ October 2015 Diodes Incorporated www.diodes.com Document number: DS38141 Rev. 1 - 2 ADVANCE INFORMATION