DMP3165L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 90m V = -10V -3.3A GS -30V Fast Switching Speed 134m V = -4.5V -2.5A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: SOT23 Cas e Mat erial: Molded P las t ic, Green Molding Com pound. Applications UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) D SOT23 D G G S S Top View Internal Schematic Top View Ordering Information (Note 4) Part Number Case Packaging DMP3165L-7 SOT23 3000/Tape & Reel DMP3165L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP3165L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -3.3 A Drain Current (Note 6) V = -10V I A GS D State -2.7 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -13 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R 159 JA Total Power Dissipation (Note 6) 1.3 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 98 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -800 nA V = -30V, V = 0V DSS DS GS 80 VGS = 12V, VDS = 0V Gate-Source Leakage nA I GSS 800 V = 15V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.3 -2.1 V V = V , I = -250A GS(TH) DS GS D V = -10V, I = -2.7A 59 90 GS D Static Drain-Source On-Resistance m R DS(ON) 100 134 V = -4.5V, I = -2.0A GS D Diode Forward Voltage V -0.83 -1.26 V V = 0V, I = -2.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 300 pF iss V = -10V, V = 0V DS GS 52 Output Capacitance C pF oss f = 1.0MHz 35 Reverse Transfer Capacitance C pF rss VGS = 0V, VDS = 0V, Gate Resistance 12.5 R G f = 1.0MHz 1.0 nC Total Gate Charge (V = -4.5V) Q GS g 2.0 Total Gate Charge (V = -10V) Q nC GS g V = -10V/-4.5V, GS 0.2 V = -15V, I = -3A Gate-Source Charge Q nC DS D gs 0.5 Gate-Drain Charge Q nC gd 3.7 Turn-On Delay Time t ns D(ON) Turn-On Rise Time 5.5 ns t R V = -15V, V = -10V, DS GS 13.6 R = 6, I = -1A Turn-Off Delay Time t ns G D D(OFF) Turn-Off Fall Time 8.4 ns t F Reverse Recovery Time 6.5 ns tRR IF = -1.0A, di/dt = 100A/s Reverse Recovery Charge 1.2 nC Q I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP3165L February 2018 Diodes Incorporated www.diodes.com Document number: DS40415 Rev. 2 - 2 ADVANCED INFORMATION