DMP31D7LDW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max D Low On-Resistance BV R max DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 0.9 V = -10V -0.55A GS ESD Protected Gate -30V 1.7 V = -4.5V -0.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Case: SOT363 This MOSFET is designed to minimize the on-state resistance (R ) yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminal Connections Indicator: See Diagram Power Management Functions Terminals: FinishMatte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.027 grams (Approximate) D G S D2 1 2 2 SOT363 G2 Gate Protection S2 Diode S G D 1 1 2 ESD PROTECTED Top View Q1 P-Channel Q2 P-Channel Top View Pin Out Ordering Information (Note 4) Part Number Case Packaging DMP31D7LDW-7 SOT363 3,000/Tape & Reel DMP31D7LDW-13 SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP31D7LDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -0.55 A Continuous Drain Current (Note 6) V = -10V I A GS D State -0.44 TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) I -0.38 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -2.4 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.29 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 433 C/W JA Total Power Dissipation (Note 6) P 0.4 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 301 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics P Channel ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1 -2.2 -2.6 V V = V , I = -250A GS(TH) DS GS D 0.5 0.9 V = -10V, I = -0.42A GS D Static Drain-Source On-Resistance R DS(ON) 0.78 1.7 V = -4.5V, I = -0.2A GS D Diode Forward Voltage -0.8 -1.2 V V V = 0V, I = -0.23A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 19 Input Capacitance C pF iss V = -15V, V = 0V, DS GS 16 Output Capacitance C pF oss f = 1.0MHz 3 Reverse Transfer Capacitance C pF rss 4.4 Gate Resistance R k V = V = 0V, f = 1.0MHz g DS GS 0.36 nC Total Gate Charge (V = -4.5V) Q GS g 0.8 nC Total Gate Charge (V = -10V) Q GS g V = -10V, I = -0.24A DS D Gate-Source Charge 0.1 nC Q gs 0.1 Gate-Drain Charge Q nC gd 3.3 Turn-On Delay Time t ns D(ON) 2.3 Turn-On Rise Time t ns V = -10V, V = -15V, R GS DD 406 Turn-Off Delay Time t ns I = -0.5A, R = 1 D(OFF) D G 237 Turn-Off Fall Time t ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP31D7LDW March 2019 Diodes Incorporated www.diodes.com Document number: DS41652 Rev. 4 - 2