DMT10H009SPS Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I Max Thermally Efficient Package-Cooler Running Applications D BV R Max DSS DS(ON) T = +25C C High Conversion Efficiency 100% Unclamped Inductive Switching (UIS) Test in Production 100V 80A 8.5m VGS = 10V Ensures More Reliable and Robust End Application Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Description Fast Switching Speed This new generation N-Channel Enhancement Mode MOSFET is <1.1mm Package Profile Ideal for Thin Applications (PowerDI ) designed to minimize R , yet maintain superior switching DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) performance. This device is ideal for use in notebook battery power Halogen and Antimony Free. Green Device (Note 3) management and load switch. Mechanical Data Applications Case: PowerDI5060-8 Motor Control Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D Pin1 S D D S G D G S Top View Top View Pin Configuration Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT10H009SPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H009SPS Marking Information D D D D = Manufacturers Marking T1009SS = Product Type Marking Code YYWW = Date Code Marking T1009SS YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53) YY WW S S S G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 14 A Continuous Drain Current V = 10V (Note 6) I A GS D State 11 T = +70C A Steady T = +25C 80 C A Continuous Drain Current V = 10V (Note 7) I GS D State 64 T = +70C C 320 Pulsed Drain Current (10s Pulse, T =+25C, Package Limited) I A C DM 69 Maximum Continuous Body Diode Forward Current I A S 320 Pulsed Body Diode Current (10s Pulse, T =+25C, Package Limited) I A C SM 11 Avalanche Current (Note 8), L=3mH I A AS Avalanche Energy (Note 8), L=3mH 181.5 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.3 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 95 C/W R JA Total Power Dissipation (Note 6) 2.7 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 47 C/W R JA Total Power Dissipation (Note 7) 83 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) 1.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 8 DMT10H009SPS January 2019 Diodes Incorporated www.diodes.com Document number: DS40610 Rev. 4 - 2