EMITTER DXT751 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Epitaxial Planar Die Construction Complementary NPN Type Available (DXT651) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) SOT89-3L Gree Device (Note 2) Mechanical Data 2,4 Case: SOT89-3L Case Material: Molded Plastic,Green Molding Compound. 1 UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 3 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Schematic and Pin Configuration Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current -3 A I C Peak Pulse Collector Current -6 A I CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 1 W A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage -80 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -60 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -100A, I = 0 (BR)EBO E C -0.1 A V = -60V, I = 0 CB E Collector Cutoff Current I CBO -10 A V = -60V, I = 0, T = 100C CB E A Emitter Cutoff Current -0.1 A = -4V, I = 0 I V EBO EB C ON CHARACTERISTICS (Note 4) -0.08 -0.3 I = -1A, I = -100mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.2 -0.6 I = -3A, I = -300mA C B Base-Emitter Saturation Voltage V -0.9 -1.25 V I = -1A, I = -100mA BE(SAT) C B Base-Emitter Turn-On Voltage V -0.8 -1 V V = -2V, I = -1A BE(ON) CE C V = -2V, I = -50mA 70 200 CE C 300 100 180 V = -2V, I = -500mA CE C DC Current Gain h FE 80 160 V = -2V, I = -1A CE C 40 140 V = -2V, I = -2A CE C AC CHARACTERISTICS Transition Frequency f 100 145 MHz V = -10V, I = -50mA, f = 100MHz T CE C Output Capacitance C 30 pF V = -10V, f = 1MHz obo CB t 45 ns I = -500mA, V = -10V on C CC Switching Times 200 ns t I = I = -50mA off B1 B2 Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 1.0 0.8 0.6 0.4 0.2 0 01 2 3 4 5 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 1 Power Dissipation Fig. 2 Typical Collector Current vs. Ambient Temperature (Note 3) vs. Collector-Emitter Voltage DS31185 Rev. 3 - 2 2 of 4 DXT751 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D