ZVN4525Z Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Gate Threshold Voltage D V R (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 250V 8.5 V = 10V 240mA GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: SOT89 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Finish Annealed over Copper Lead Battery Operated Systems and Solid-State Relays frame. Solderable per MIL-STD-202, Method 208 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.052 grams (Approximate) Memories, Transistors, etc D SOT89 G S Equivalent Circuit Pin-out Top View Top View Ordering Information (Note 4) Part Number Compliance Case Quantity per Reel ZVN4525ZTA Standard SOT89 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4525Z Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 250 V DSS Gate-Source Voltage V 40 V GSS Steady TA = +25C (Note 5) 240 Continuous Drain Current, V = 10V I mA GS D State 192 T = +70C (Note 5) A Maximum Body Diode Forward Current 1.1 A I S Pulsed Drain Current (Note 7) I 1.44 A DM Pulsed Source Current (Note 7) I 1.44 A SM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation 1.2 W T = +25C (Note 5) P A D Linear Derating Factor 9.6 mW/C Steady State (Note 5) 103 C/W Thermal Resistance, Junction to Ambient R JA Steady State (Note 6) 50 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 250 285 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 35 500 nA V = 250V, V = 0V DSS DS GS Gate-Source Leakage I 1 100 nA V = 40V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.8 1.4 1.8 V V = V , I = 1mA GS(TH) DS GS D 5.6 8.5 V = 10V, I = 500mA GS D Static Drain-Source On-Resistance (Note 8) 5.9 9.0 R V = 4.5V, I = 360mA DS(ON) GS D 6.4 9.5 V = 2.4V, I = 20mA GS D Diode Forward Voltage (Note 8) 0.97 V V V = 0V, I = 360mA SD GS S Forward Transconductance (Note 10) 0.3 475 S g V = 10V, I = 0.3A fs DS D DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 72 iss V = 25V, V = 0V DS GS Output Capacitance C 11 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.6 rss Total Gate Charge Q 2.6 3.65 g Gate-Source Charge Q 0.2 0.28 nC V = 25V, I = 360mA, V = 10V gs DS D GS Gate-Drain Charge 0.5 0.70 Qgd Turn-On Delay Time 1.25 t D(ON) Turn-On Rise Time 1.70 t V = 50V, R = 6.0, R DD G ns Turn-Off Delay Time 11.40 I = 200mA, R = 4.4 t D D D(OFF) Turn-Off Fall Time 3.50 t F Body Diode Reverse Recovery Time 186 260 ns t RR I = 360mA, dI/dt = 100A/s F Body Diode Reverse Recovery Charge 34 48 nC Q RR Notes: 5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air condition. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal. 8. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 ZVN4525Z April 2015 Diodes Incorporated www.diodes.com Document number: DS33384 Rev. 3 - 2