NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low On-Resistance BV R Package DSS DS(ON) T = +25C A Low Threshold (Notes 5 & 6) Fast Switching Speed 2.5A 130m V = 4.5V GS Low Gate Drive 20V MSOP-8 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2.3A 150m V = 2.7V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description Case: MSOP-8 This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Applications Weight: 0.0277 grams (Approximate) DC-DC Converters Power Management Functions Motor Control Disconnect Switches MSOP-8 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXMD63N02XTA ZXM63N02 7 12 1,000 ZXMD63N02XTC ZXM63N02 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART ZXMD63N02X Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS V = 10V T = +25C (Notes 5 & 6) GS A 2.5 Steady Continuous Drain Current 1.9 A V = 10V T = +70C (Notes 5 & 6) I GS A D State 0.78 V = 10V T = +100C (Notes 5 & 6) GS A Pulsed Drain Current (Notes 6 & 7) I 19 A DM Continuous Source Current (Body Diode) (Notes 5 & 6) I 1.5 A S Pulsed Source Current (Body Diode) (Notes 6 & 7) I 19 A SM Thermal Characteristics Characteristic Symbol Value Unit (Notes 6 & 8) 0.87 Power Dissipation (Notes 5 & 6) P 1.25 W D (Notes 8 & 9) 1.04 (Notes 6 & 8) 143 Thermal Resistance, Junction to Ambient (Notes 5 & 6) R 100 C/W JA (Notes 8 & 9) 120 Thermal Resistance, Junction to Leads (Note 10) 84.9 C/W R JL Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. For a device surface mounted on FR-4 PCB measured at t 10 sec. 6. For device with one active die. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.02, pulse width 300s pulse width limited by maximum junction temperature. 8. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 9. For device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMD63N02X June 2018 Diodes Incorporated www.diodes.com Document number: DS33500 Rev. 5 - 3