X-On Electronics has gained recognition as a prominent supplier of ZXMHC10A07N8TC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMHC10A07N8TC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary I D Device V Q R (BR)DSS G DS(on) T = 25 C A 0.70 V = 10V 1.0A GS N-CH 100V 2.9nC 0.90 V = 6.0V 0.9A GS 1.00 V = -10V -0.9A GS P-CH -100V 3.5nC 1.45 V = -6.0V -0.7A GS P1S/P2S Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P2G Features P1D/N1D P2D/N2D 2 x N + 2 x P channels in a SOIC package Applications N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXMHC10A07N8TC 13 12 2,500 Device marking ZXMHC 10A07 Issue 1.0 - March 2009 1 www.diodes.com Diodes Incorporated ZXMHC10A07N8 Absolute maximum ratings Parameter Symbol N- P- Unit channel channel V Drain-Source voltage DSS 100 -100 V V Gate-Source voltage GS 20 20 V (b) 1.00 -0.85 A I D Continuous Drain current V = 10V T =25 C GS A (b) 0.80 -0.68 V = 10V T =70 C GS A (a) 0.80 -0.68 V = 10V T =25 C GS A (f) 0.81 -0.69 V = 10V T =25 C GS L (c) I DM 4.30 -3.64 A Pulsed Drain current V = 10V T =25 C GS A (b) 0.70 -0.60 A Continuous Source current (Body diode) at T =25 C I A S (c) 4.30 -3.64 A Pulsed Source current (Body diode) at T =25 C I A SM (a) 0.87 W Power dissipation at T =25 C P A D mW/ C Linear derating factor 6.94 (b) 1.36 W Power dissipation at T =25 C A P D 10.9 mW/ C Linear derating factor (f) 0.90 W Power dissipation at T =25 C L P D 7.19 mW/ C Linear derating factor T , T Operating and storage temperature range -55 to 150 j stg C Thermal resistance Parameter Symbol Value Unit (a) R 144 Junction to ambient C/W JA (b) R 92 C/W Junction to ambient JA (d) R 106 C/W Junction to ambient JA (e) R 254 Junction to ambient C/W JA (f) 139 R C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection) the device is measured when operating in a steady-state condition with one active die. (b) Same as note (a), except the device is measured at t 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection) the device is measured when operating in a steady-state condition with one active die. (e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions the device is measured when operating in a steady-state condition with one active die. (f) Thermal resistance from junction to solder-point (at the end of the drain lead) the device is operating in a steady-state condition with one active die. Issue 1.0 - March 2009 2 www.diodes.com Diodes Incorporated