ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Fast Switching Speed D V R (BR)DSS DS(on) T = +25C A Low Gate Drive 350m V = -10V -1.6A GS Low Input Capacitance -100V -1.4A 450m V = -6V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance and yet Mechanical Data maintain superior switching performance, making it ideal for high Case: SOT26 efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See Diagram Below DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Leadframe e3 Power Management Functions Solderable per MIL-STD-202, Method 208 Uninterrupted Power Supply Weight: 0.018 grams (Approximate) SOT26 D D D D G S Top View Pin Out Equivalent Circuit Top View Ordering Information (Note 4) Part Number Compliance Case Packaging ZXMP10A17E6TA Standard SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP10A17E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -100 V DSS Gate-Source Voltage V 20 V GS (Note 6) -1.6 Continuous Drain Current V = 10V T = +70C (Note 6) I -1.3 A GS A D (Note 5) -1.3 Pulsed Drain Current V = 10V (Note 7) I -7.7 A GS DM Continuous Source Current (Body Diode) (Note 6) -2.1 A I S Pulsed Source Current (Body Diode) (Note 7) -7.7 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 5) Power Dissipation 8.8 W PD Linear Derating Factor 1.7 mW/C (Note 6) 13.7 (Note 5) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 73 Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage -100 V BV I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current -0.5 A I V = -100V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage -2 -4 V V I = -250A, V = V GS(th) D DS GS 0.35 V = -10V, I = -1.4A GS D Static Drain-Source On-Resistance (Note 8) R DS(ON) 0.45 V = -6V, I = -1.2A GS D Forward Transconductance (Notes 8 & 9) g 2.8 S V = -15V, I = -1.4A fs DS D Diode Forward Voltage (Note 8) V -0.85 -0.95 V I = -1.7A, V = 0V SD S GS Reverse Recovery Time (Note 9) 33 ns t rr I = -1.5A, di/dt = 100A/s S Reverse Recovery Charge (Note 9) 48 nC Q rr DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 424 pF C iss V = -50V, V = 0V DS GS Output Capacitance 36.6 pF C oss F = 1MHz Reverse Transfer Capacitance 29.8 pF C rss Total Gate Charge (Note 10) 7.1 nC Q V = -6V g GS Total Gate Charge (Note 10) Q 10.7 nC V = -50V g DS Gate-Source Charge (Note 10) Q 1.7 nC V = -10V I = -1.4A gs GS D Gate-Drain Charge (Note 10) Q 3.8 nC gd Turn-On Delay Time (Note 10) t 3 ns D(on) Turn-On Rise Time (Note 10) t 3.5 ns r V = -50V, V = -10V DD GS Turn-Off Delay Time (Note 10) 13.4 ns I = -1A, R 6 t D G D(off) Turn-Off Fall Time (Note 10) 7.2 ns t f Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 5 sec. 7. Same as Note 5, except the device is pulsed with D = 0.05 and pulse width 10s. The pulse current is limited by the maximum junction temperature. 8. Measured under pulsed conditions. Pulse width 300s duty cycle 2%. 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. 2 of 7 ZXMP10A17E6 March 2015 Diodes Incorporated www.diodes.com Document Number DS32027 Rev. 7 - 2 ADVANCE INFORMATION