AUTOMOTIVE GRADE AUIRF7759L2TR Automotive DirectFET Power MOSFET Advanced Process Technology V 75V (BR)DSS Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications R typ. 1.8m DS(on) Exceptionally Small Footprint and Low Profile max. 2.3m High Power Density I 160A D (Silicon Limited) Low Parasitic Parameters Q 200nC Dual Sided Cooling g (typical) 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability S S Lead free, RoHS and Halogen free S S Automotive Qualified * D D G S S S S DirectFET ISOMETRIC L8 Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The AUIRF7759L2TR(1) combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRF7759L2 DirectFET Large Can AUIRF7759L2TR Tape and Reel 4000 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 75 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 160 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 113 D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 26 A D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 375 D C GS I Pulsed Drain Current 640 DM P T = 25C Power Dissipation 125 D C P T = 100C Power Dissipation 63 W D C P T = 25C Power Dissipation 3.3 D A E Single Pulse Avalanche Energy (Thermally Limited) 257 mJ AS A I Avalanche Current AR See Fig. 16, 17, 18a, 18b E Repetitive Avalanche Energy mJ AR T Peak Soldering Temperature 270 P T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRF7759L2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 45 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R JA C/W Junction-to-Can 1.2 R J-Can R Junction-to-PCB Mounted 0.5 J-PCB Linear Derating Factor 0.83 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 2.0mA V / T D (BR)DSS J 1.8 2.3 V = 10V, I = 96A R Static Drain-to-Source On-Resistance m GS D DS(on) V Gate Threshold Voltage 2.0 3.0 4.0 V GS(th) V = V , I = 250A DS GS D V / T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J gfs Forward Transconductance 74 S V = 25V, I = 96A DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 200 300 V = 38V g DS V = 10V Q Gate-to-Source Charge 37 gs1 GS Q Gate-to-Source Charge 11 I = 96A D gs2 nC See Fig.11 Q Gate-to-Drain Mille) Charge 62 93 gd Q Gate Charge Overdrive 91 godr Q Switch Charge (Q + Q) 73 sw gs2 gd Q Output Charge 60 V = 16V, V = 0V nC oss DS GS R Internal Gate Resistance 1.1 G t Turn-On Delay Time 18 V = 38V, V = 10V d(on) DD GS t Rise Time 37 I = 96A r D ns t Turn-Off Delay Time 80 R = 1.8 d(off) G t Fall Time 33 f C Input Capacitance 12222 V = 0V iss GS C Output Capacitance 1465 V = 25V DS oss C Reverse Transfer Capacitance 609 = 1.0 MHz rss pF C Output Capacitance 7457 V = 0V, V = 1.0V, = 1.0 MHz oss GS DS C Output Capacitance 955 V = 0V, V = 60V, = 1.0 MHz oss GS DS Notes through are on page 3 2 2015-10-5