AUTOMOTIVE GRADE AUIRFN8459 Features V 40V DSS Advanced Process Technology R 4.8m Dual N-Channel MOSFET DS(on) typ. Ultra Low On-Resistance 5.9m max 175C Operating Temperature I (Silicon Limited) D 70A Fast Switching Repetitive Avalanche Allowed up to Tjmax I (Package Limited) D 50A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast swithcing speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety DUAL PQFN 5X6 mm of other applications. G D S Applications Gate Drain Source 12V Automotive Systems Brushed DC Motor Braking Transmission Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFN8459 Dual PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN8459TR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 70 D C (Bottom) GS I T = 100C Continuous Drain Current, V 10V 50 D C (Bottom) GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 50 D C (Bottom) GS I Pulsed Drain Current 320 DM Power Dissipation 50 W P T = 25C D C (Bottom) Linear Derating Factor 0.33 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 66 mJ AS E (Tested) Single Pulse Avalanche Energy 110 AS I Avalanche Current See Fig. 14, 15, 22a, 22b A AR E Repetitive Avalanche Energy AR T Operating Junction and -55 to + 175 J C T Storage Temperature Range STG HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFN8459 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.0 R (Bottom) JC Junction-to-Case 45 R (Top) C/W JC Junction-to-Ambient 40 R JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 1.0mA D (BR)DSS J R Static Drain-to-Source On-Resistance 4.8 5.9 V = 10V, I = 40A m GS D DS(on) V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 50A GS(th) DS GS D gfs Forward Transconductance 66 S V = 10V, I = 40A DS D R Internal Gate Resistance 1.9 G 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 40 60 I = 40A g D Q Gate-to-Source Charge 13 V = 20V gs DS nC Q Gate-to-Drain Mille) Charge 14 V = 10V GS gd Q Total Gate Charge Sync. (Q - Q ) 26 I = 40A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 10 V = 26V d(on) DD t Rise Time 55 I = 40A D r ns t Turn-Off Delay Time 25 R = 2.7 d(off) G V = 10V t Fall Time 42 f GS C Input Capacitance 2250 V = 0V iss GS C Output Capacitance 340 V = 25V oss DS C Reverse Transfer Capacitance 215 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 400 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 490 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current 70 MOSFET symbol I A S (Body Diode) showing the Pulsed Source Current 320 integral reverse I A SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 40A, V = 0V SD J S GS dv/dt Peak Diode Recovery 7.0 V/ns T = 175C, I = 40A, V = 40V J S DS 22 T = 25C J t Reverse Recovery Time ns V = 34V, rr R 23 T = 125C J I = 40A F 17 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 17 T = 125C J I Reverse Recovery Current 1.0 A T = 25C RRM J 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback May 12, 2015