AUTOMOTIVE GRADE AUIRFR2407 HEXFET Power MOSFET Features Advanced Planar Technology V 75V DSS Low On-Resistance Dynamic dV/dT Rating R typ. 21.8m DS(on) 175C Operating Temperature max. 26m Fast Switching Fully Avalanche Rated I 42A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * S Description G Specifically designed for Automotive applications, this Stripe Planar D-Pak design of HEXFET Power MOSFETs utilizes the latest AUIRFR2407 processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well G D S known for, provides the designer with an extremely efficient and Gate Drain Source reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR2407 AUIRFR2407 D-Pak Tape and Reel Left 3000 AUIRFR2407TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 42 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 29 A D C GS I Pulsed Drain Current 170 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.71 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 130 mJ AS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 11 mJ AR dv/dt Pead Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.4 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA R Junction-to-Ambient 110 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-23 AUIRFR2407 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.078 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 21.8 26.0 mV = 10V, I = 25A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 27 S V = 25V, I = 25A DS D 25 V = 75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 74 110 I = 25A g D Q Gate-to-Source Charge 13 19 nC V = 60V gs DS Q Gate-to-Drain Charge 22 34 V = 10V gd GS t Turn-On Delay Time 16 V = 38V d(on) DD t Rise Time 90 I = 25A r D ns t Turn-Off Delay Time 65 R = 6.8 d(off) G t Fall Time 66 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2400 V = 0V iss GS C Output Capacitance 340 V = 25V oss DS = 1.0MHz, See Fig. 5 C Reverse Transfer Capacitance 77 rss pF C Output Capacitance 15700 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 220 V = 0V, V = 60V, = 1.0MHz oss GS DS C Effective Output Capacitance 220 V = 0V, V = 0V to 60V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 42 S (Body Diode) showing the A Pulsed Source Current integral reverse I 170 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 25A,V = 0V SD J S GS t Reverse Recovery Time 100 150 ns T = 25C ,I = 25A rr J F Q Reverse Recovery Charge 400 600 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. V = 25V, starting T = 25C, L = 0.42mH, R = 25 , I = 25A DD J G AS I 25A, di/dt 290A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. C . is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 . R is measured at T approximately 90C. J 2 2015-11-23