AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology V -55V DSS Low On-Resistance P-Channel R max. 0.175 DS(on) Dynamic dv/dt Rating I -11A D 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Compliant Automotive Qualified * S S Description D G G Specifically designed for Automotive applications, this Cellular design of HEXFET Power MOSFETs utilizes the latest D-Pak I-Pak AUIRFR9024N AUIRFU9024N processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are G D S well known for, provides the designer with an extremely efficient Gate Drain Source and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU9024N I-Pak Tube 75 AUIRFU9024N Tube 75 AUIRFR9024N AUIRFR9024N D-Pak Tape and Reel Left 3000 AUIRFR9024NTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -11 D C GS I T = 100C Continuous Drain Current, V -10V -8 A D C GS I Pulsed Drain Current -44 DM P T = 25C Maximum Power Dissipation 38 W D C Linear Derating Factor 0.30 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 62 AS mJ I Avalanche Current -6.6 A AR E Repetitive Avalanche Energy 3.8 mJ AR dv/dt Peak Diode Recovery dv/dt -10 V/ns T Operating Junction and -55 to + 150 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.3 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-20 AUIRFR/U9024N Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 0.175 V = -10V, I = -6.6A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D gfs Forward Trans conductance 2.5 S V = -25V, I = -7.2A DS D -25 V = -55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -44V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I nA GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 19 I = -7.2A g D Q Gate-to-Source Charge 5.1 nC V = -44V gs DS Q Gate-to-Drain Charge 10 V = -10V, See Fig 6 and 13 gd GS t Turn-On Delay Time 13 V = -28V d(on) DD t Rise Time 55 I = -7.2A r D ns t Turn-Off Delay Time 23 R = 24 d(off) G t Fall Time 37 R = 3.7 See Fig 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 350 V = 0V iss GS C Output Capacitance 170 pF V = -25V oss DS C Reverse Transfer Capacitance 92 = 1.0MHz, See Fig. 5 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -11 S (Body Diode) showing the A Pulsed Source Current integral reverse I -44 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -7.2A,V = 0V SD J S GS t Reverse Recovery Time 47 71 ns T = 25C ,I = -7.2A rr J F di/dt = 100A/s Q Reverse Recovery Charge 84 130 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Starting T = 25C, L = 2.8mH, R = 25 , I = -6.6A. (See Fig.12) J G AS I -6.6A, di/dt -240A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. This is applied for I-PAK, L of D-PAK is measured between lead and center of die contact . S Uses IRF9Z24N data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2015-10-20