AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive V 100V DSS Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature R max. 0.185 DS(on) Fast Switching Fully Avalanche Rated I 10A D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description S Specifically designed for Automotive applications, this cellular G design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon D-Pak area. This benefit combined with the fast switching speed and AUIRLR120N ruggedized device design that HEXFET power MOSFETs are well G D S known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other Gate Drain Source applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRLR120N AUIRLR120N D-Pak Tape and Reel Left 3000 AUIRLR120NTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 10 D C GS I T = 100C Continuous Drain Current, V 10V 7.0 D C GS A I Pulsed Drain Current 35 DM P T = 25C Maximum Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 85 AS mJ I Avalanche Current 6.0 A AR E Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.1 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR120N Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 0.185 V = 10V, I = 6.0A GS D R Static Drain-to-Source On-Resistance 0.225 V = 5.0V, I = 6.0A DS(on) GS D 0.265 V = 4.0V, I = 5.0A GS D V Gate Threshold Voltage 1.0 2.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 3.1 S V = 25V, I = 6.0A DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =150C DS GS J Gate-to-Source Forward Leakage 100 V = 16V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = - 16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 20 I = 6.0A g D Q Gate-to-Source Charge 4.6 nC V = 80V gs DS Q Gate-to-Drain Charge 10 V = 5.0V, See Fig. 6 &13 gd GS t Turn-On Delay Time 4.0 = 50V V d(on) DD t Rise Time 35 I = 6.0A r D ns t Turn-Off Delay Time 23 R = 11V = 5.0V d(off) G GS t Fall Time 22 R = 8.2,See Fig. 10 f D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 440 V = 0V iss GS C Output Capacitance 97 pF V = 25V oss DS = 1.0MHz, See Fig.5 C Reverse Transfer Capacitance 50 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 10 S (Body Diode) showing the A Pulsed Source Current integral reverse I 35 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 6.0A, V = 0V SD J S GS t Reverse Recovery Time 110 160 ns T = 25C ,I = 6.0A rr J F Q Reverse Recovery Charge 410 620 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Starting T = 25C, L = 4.7mH, R = 25 , I = 6.0A (See fig. 12) J G AS I 6.0A, di/dt 340A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2015-12-11