BSC018NE2LS TM OptiMOS Power-MOSFET Product Summary Features V 25 V DS Optimized for high performance Buck converter R 1.8 mW DS(on),max Very low on-resistance R V =4.5 V DS(on) GS I 100 A D 100% avalanche tested Q 21 nC OSS Superior thermal resistance Q (0V..10V) 39 nC G N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC018NE2LS PG-TDSON-8 018NE2LS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 100 A D GS C V =10 V, T =100C 97 GS C V =4.5 V, T =25C 100 GS C V =4.5 V, GS 86 T =100C C V =10 V, T =25C, GS A 29 2) R =50K/W thJA 3) I T =25C 400 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =50A, R =25W 80 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 2.2 page 1 2013-02-12 BSC018NE2LS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 69 W tot C T =25 C, A 2.5 2) R =50K/W thJA Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC top - - 20 2 2) Device on PCB R - - 50 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 25 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250A 1.2 - 2.0 GS(th) DS GS D V =25V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =25V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS R V =4.5V, I =30A Drain-source on-state resistance - 1.8 2.3 mW DS(on) GS D V =10V, I =30A - 1.5 1.8 GS D R Gate resistance 0.3 0.7 1.4 W G V >2 I R , DS D DS(on)max g Transconductance 70 140 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-02-12