BSC018NE2LSI TM OptiMOS Power-MOSFET Product Summary Features V 25 V DS Optimized for high performance Buck converter R 1.8 mW DS(on),max Monolithic integrated Schottky like diode A I 100 D Very low on-resistance R V =4.5 V DS(on) GS Q 23 nC OSS 100% avalanche tested 36 nC Q (0V..10V) G N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC018NE2LSI PG-TDSON-8 018NE2LI Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 100 A D GS C V =10 V, T =100C 97 GS C V =4.5 V, T =25C 100 GS C V =4.5 V, GS 84 T =100C C V =10 V, T =25C, GS A 29 2) R =50K/W thJA 3) I T =25C 400 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C E I =50A, R =25W Avalanche energy, single pulse 45 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.2.2 page 1 2013-04-29BSC018NE2LSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 69 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =10mA Drain-source breakdown voltage 25 - - V (BR)DSS GS D dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Gate threshold voltage V V =V , I =250A 1.2 - 2 V GS(th) DS GS D V =20V, V =0V, DS GS I Zero gate voltage drain current - - 0.5 mA DSS T =25C j V =20V, V =0V, DS GS - 2 - T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 1.9 2.4 DS(on) GS D mW V =10V, I =30A - 1.5 1.8 GS D R Gate resistance 0.4 0.8 1.6 W G V >2 I R , DS D DS(on)max g Transconductance 65 130 - S fs I =30A D 3) See figure 3 for more detailed information Rev.2.2 page 2 2013-04-29