BSC052N03LS TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized for high performance Buck converter R 5.2 mW DS(on),max Very low on-resistance R V =4.5 V DS(on) GS I 57 A D 100% avalanche tested Q 1.9 nC GD Superior thermal resistance Q (0V..10V) 12 nC G N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC052N03LS PG-TDSON-8 052N03LS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 57 A D GS C V =10 V, T =100C 36 GS C V =4.5 V, T =25C 48 GS C V =4.5 V, GS 31 T =100C C V =10 V, T =25C, GS A 17 2) R =50K/W thJA 3) I T =25C 228 Pulsed drain current D,pulse C 4) I T =25C 35 Avalanche current, single pulse AS C E I =35A, R =25W Avalanche energy, single pulse 12 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 2.2 page 1 2013-05-14 BSC052N03LS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 28 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 4.5 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1.2 - 2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 5.8 7.2 mW DS(on) GS D V =10V, I =30A - 4.3 5.2 GS D R Gate resistance 0.3 0.65 1.3 W G V >2 I R , DS D DS(on)max g Transconductance 38 75 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-05-14