BSC0902NSI TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized SyncFET for high performance buck converter R 2.8 mW DS(on),max Integrated monolithic Schottky-like diode I 100 A D Very low on-resistance R V =4.5 V DS(on) GS Q 17 nC OSS 100% avalanche tested Q (0V..10V) 24 nC G Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC0902NSI PG-TDSON-8 0902NSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 100 A D GS C V =10 V, T =100C 65 GS C V =4.5 V, T =25C 89 GS C V =4.5 V, GS 56 T =100C C V =10 V, T =25C, GS A 23 2) R =50K/W thJA 3) I T =25C 400 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =40A, R =25W 30 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2013-05-16 BSC0902NSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 48 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.6 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =10mA 30 - - V (BR)DSS GS D dV Breakdown voltage temperature I =10mA, referenced (BR)DSS D - 15 - mV/K coefficient /dT to 25C j V V =V , I =10mA Gate threshold voltage 1.2 - 2 V GS(th) DS GS D Zero gate voltage drain current I V =24V, V =0V - - 0.5 mA DSS DS GS V =24V, V =0V, DS GS - 2 - T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =4.5V, I =30A Drain-source on-state resistance - 3.0 3.7 mW DS(on) GS D V =10V, I =30A - 2.3 2.8 GS D R Gate resistance 0.5 0.9 1.8 W G V >2 I R , DS D DS(on)max Transconductance g 50 100 - S fs I =30A D 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-05-16