IAUS300N08S5N012T OptiMOS -5 Power-Transistor Product Summary V 80 V DS R 1.2 m W DS(on) Features I 300 A D OptiMOS power MOSFET for automotive applications PG-HDSOP-16-2 N-channel Enhancement mode Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IAUS300N08S5N012T PG-HDSOP-16-2 5N08012 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit V =10 V, Chip GS I Continuous drain current 400 A D 1,2) limitation V =10V, DC GS 300 3) current T =85 C, V =10V, a GS 117 2,4) R on 2s2p thJA 2) I T =25 C, t = 100 s 1450 Pulsed drain current D,pulse C p 2) E I =150A 817 mJ Avalanche energy, single pulse AS D I - Avalanche current, single pulse 300 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 375 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2020-10-01 IAUS300N08S5N012T Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R Top - - 0.4 K/W thJC Bottom (Pin 1-7) - 9 - Bottom (Pin 9-16) - 3 - Top - 2.8 - Thermal resistance, junction - R thJA 4) ambient Bottom (through PCB) - 40 - Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V =0V, GS V Drain-source breakdown voltage 80 - - V (BR)DSS I =1mA D V V =V , I =275A Gate threshold voltage 2.2 3 3.8 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =50V, V =0V, DS GS - 1 20 2) T =85C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =6V, I =75A Drain-source on-state resistance - 1.4 1.8 m DS(on) GS D V =10V, I =100A - 1.0 1.2 GS D 2) R - - 1.5 - W Gate resistance G Rev. 1.0 page 2 2020-10-01