IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 3.5 mW DS(on) I -120 A D Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120P04P4-04 PG-TO263-3-2 4PP0404 IPI120P04P4-04 PG-TO262-3-1 4PP0404 IPP120P04P4-04 PG-TO220-3-1 4PP0404 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit T =25C, C 1) I -120 A Continuous drain current D V =-10V GS T =100C, C -110 2) V =-10V GS 2) I T =25C -480 Pulsed drain current D,pulse C E I =-60A Avalanche energy, single pulse 78 mJ AS D I Avalanche current, single pulse - -120 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 136 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2015-05-27IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 1.1 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = -1mA Drain-source breakdown voltage -40 - - V (BR)DSS GS D V V =V , I =-340A Gate threshold voltage -2.0 -3.0 -4.0 GS(th) DS GS D V =-32V, V =0V, DS GS I Zero gate voltage drain current - -0.05 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-20V, V =0V Gate-source leakage current - - -100 nA GSS GS DS Drain-source on-state resistance R V =-10V, I =-100A - 2.9 3.8 mW DS(on) GS D V =-10V, I =-100A, GS D - 2.6 3.5 SMD version Rev. 1.1 page 2 2015-05-27