IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Green product (RoHS compliant) Type Package Marking IPB80N04S2-H4 PG-TO263-3-2 2N04H4 IPP80N04S2-H4 PG-TO220-3-1 2N04H4 IPI80N04S2-0H4 PG-TO262-3-1 2N04H4 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25 C, V =10 V 80 A Continuous drain current D C GS T =100 C, C 80 2) V =10 V GS 2) I T =25 C 320 Pulsed drain current D,pulse C E I =80A Avalanche energy, single pulse 660 mJ AS D V Gate source voltage 20 V GS Power dissipation P T =25 C 300 W tot C Operating and storage temperature T , T -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2008-02-22 IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 0.5 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 40 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 2.1 3.0 4.0 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =40 V, V =0 V, DS GS - 1 100 2) T =125 C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS R Drain-source on-state resistance V =10 V, I =80 A - 3.5 4.0 m DS(on) GS D V =10 V, I =80 A, GS D - 3.2 3.7 SMD version Rev. 1.1 page 2 2008-02-22