IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
OptiMOS Power-Transistor
Product Summary
Features
V 75 V
DS
N-channel - Enhancement mode
R (SMD version) 7.1
m
DS(on),max
Automotive AEC Q101 qualified
I 80 A
D
MSL1 up to 260C peak reflow
175C operating temperature
PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
Type Package Ordering Code Marking
IPB80N08S2-07 PG-TO263-3-2 SP0002-19048 2N0807
IPP80N08S2-07 PG-TO220-3-1 SP0002-19040 2N0807
IPI80N08S2-07 PG-TO262-3-1 SP0002-19043 2N0807
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
1)
I T =25 C, V =10 V 80 A
Continuous drain current D C GS
T =100 C,
C
80
2)
V =10 V
GS
2)
I T =25 C
320
Pulsed drain current D,pulse C
2)
E I =80A
810 mJ
Avalanche energy, single pulse AS D
4)
V 20 V
Gate source voltage
GS
P T =25 C
Power dissipation 300 W
tot C
T , T
Operating and storage temperature -55 ... +175 C
j stg
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.0 page 1 2006-03-03 IPB80N08S2-07
IPP80N08S2-07, IPI80N08S2-07
Parameter Symbol Conditions Values Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - 0.5 K/W
thJC
Thermal resistance, junction -
R
-- 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
2 5)
-- 40
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 75 - - V
(BR)DSS GS D
V V =V , I =250 A
Gate threshold voltage 2.1 3.0 4.0
GS(th) DS GS D
V =75 V, V =0 V,
DS GS
I
Zero gate voltage drain current - 0.01 1 A
DSS
T =25 C
j
V =75 V, V =0 V,
DS GS
- 1 100
2)
T =125 C
j
Gate-source leakage current I V =20 V, V =0 V - 1 100 nA
GSS GS DS
R
Drain-source on-state resistance V =10 V, I =80 A, - 5.8 7.4 m
DS(on)
GS D
V =10 V, I =80 A,
GS D
- 5.5 7.1
SMD version
Rev. 1.0 page 2 2006-03-03